Semiconductor structure with curved surfaces

A semiconductor structure, comprising:

• a patterned material comprising:
• a plurality of active areas;
• a first conductive material on a surface of each of the plurality of active areas;
• a first metal material on a surface of each first conductive materials;
• a second conductive material, a third conductive material formed on the second conductive material along a first direction, and a first dielectric material formed on the third conductive material along the first direction, wherein the third conductive material is a digit line material;
• a first insulative material formed adjacent to a vertical boundary comprising the first metal material, the second conductive material, and the third conductive material along a second direction, wherein the first insulative material separates, along the second direction each active area of the active areas, the first conductive material, and the first metal material from each of the second conductive material, the third conductive material, and the first dielectric material;
• a curved surface extending, along the second direction, from an intermediate portion of a first side of the first metal material to and an intermediate portion of the first insulative material along the first direction;
• and
• a second insulative material and a second metal material on the surface of the patterned material, wherein a portion of the second insulative material is in contact with the curved surface, and wherein the second insulative material is different from the first insulative material.