# US 12,765,007 B2 · Vertical oriented semiconductor device in which well regions are created in a semiconductor body, and a method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,765,007 B2 - Document ID: US12765007B2 - Status: Granted - Kind: B2 - Application number: 18/356,782 - Filed: 2023-07-21 - Published: 2024-02-08 - Granted: 2026-10-13 - Earliest claimed: 2022-07-22 - Assignees: Nexperia B.V. - Applicants: Nexperia B.V. - Inventors: Falk-Ulrich Stein; Jakob Teichrib - Web page: https://patentgrep.com/patent/US12765007B2 ## CPC - H10D 62/109: {Reduced surface field [RESURF] PN junction structures} - H10D 30/66: Vertical DMOS [VDMOS] FETs - H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)} - H10D 62/8325: {Silicon carbide} - H10P 30/22: using masks - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A vertical oriented semiconductor device is provided. The present disclosure further provides that at least one of the well regions of the device have at least two lateral doping gradients, at different depths in the semiconductor material, and each doping gradient has a monotonic decreasing doping concentration, from a higher doping concentration at a first lateral end of the well regions towards a lower doping concentration at a second, opposite lateral end thereof facing the current-accommodating region. These two doping gradients, at different depths, differ from each other, with one of the advantages being that the semiconductor device is made more robust. Multiple ways of implementing the two different lateral doping gradients are provided. Some of the advantages are that the electric field crowding at the corners of the well regions is gradually reduced, and the current distribution can be improved. ## Claims ### Claim 1 A vertical oriented semiconductor device comprising a semiconductor body having a first major surface, the semiconductor device comprising: a current-accommodating region of a first conductivity type, wherein the current-accommodating region is adjoining the first major surface; well regions of a second conductivity type, at or near the first major surface, the second conductivity type opposite to the first conductivity type, the well regions being laterally adjacent sides of the current-accommodating region, the well regions having a first depth into the semiconductor body; a substrate region provided at a second major surface vertically opposite to the first major surface, the substrate region being of the first conductivity type; wherein at least one of the well regions has: a first lateral doping gradient with a monotonic decreasing doping concentration, from a first higher doping concentration at a first lateral end of the well region towards a first lower doping concentration at a second, opposite lateral end thereof facing the current-accommodating region; and a second lateral doping gradient with a monotonic decreasing doping concentration, from a second higher doping concentration at the first lateral end of the well region towards a second lower doping concentration at the second opposite, lateral end thereof facing the current-accommodating region; wherein the second lateral doping gradient is deeper inside the semiconductor body compared to the first lateral doping gradient, and wherein the first lateral doping gradient differs from the second lateral doping gradient; wherein the current-accommodating region has a doping gradient in a depth direction so that a doping concentration increases with increasing depth. ### Claim 2 (depends on 1) The vertical oriented semiconductor device in accordance with claim 1, wherein the first lower doping concentration is higher compared to the second lower doping concentration. ### Claim 3 (depends on 2) The vertical oriented semiconductor device in accordance with claim 2, wherein the first lateral doping gradient and the second lateral doping gradient are vertically aligned. ### Claim 4 (depends on 2) The vertical oriented semiconductor device in accordance with claim 2, wherein the second lower doping concentration has a horizontal offset with respect to the first lower doping concentration in a direction away from the current-accommodating region. ### Claim 5 (depends on 2) The vertical oriented semiconductor device in accordance with claim 2, wherein the well regions have a lateral doping gradient with a monotonic decreasing doping concentration. ### Claim 6 (depends on 2) The vertical oriented semiconductor device in accordance with claim 2, wherein the monotonic decreasing doping concentrations comprises discrete steps in different doping concentrations. ### Claim 7 (depends on 2) The vertical oriented semiconductor device in accordance with claim 2, wherein the semiconductor device is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). ### Claim 8 (depends on 2) The vertical oriented semiconductor device in accordance with claim 2, wherein the first conductivity type and the second conductivity type comprises any of N-type and P-type semiconductor material. ### Claim 9 (depends on 1) The vertical oriented semiconductor device in accordance with claim 1, wherein the first lower doping concentration is lower compared to the second lower doping concentration. ### Claim 10 (depends on 1) The vertical oriented semiconductor device in accordance with claim 1, wherein the first lateral doping gradient and the second lateral doping gradient are vertically aligned. ### Claim 11 (depends on 1) The vertical oriented semiconductor device in accordance with claim 1, wherein the second lower doping concentration has a horizontal offset with respect to the first lower doping concentration in a direction away from the current-accommodating region. ### Claim 12 (depends on 11) The vertical oriented semiconductor device in accordance with claim 11, wherein the semiconductor device is a Silicon Carbide (SiC) MOSFET. ### Claim 13 (depends on 1) The vertical oriented semiconductor device in accordance with claim 1, wherein the well regions have a lateral doping gradient with a monotonic decreasing doping concentration. ### Claim 14 (depends on 1) The vertical oriented semiconductor device in accordance with claim 1, wherein the monotonic decreasing doping concentrations comprises discrete steps in different doping concentrations. ### Claim 15 (depends on 1) The vertical oriented semiconductor device in accordance with claim 1, wherein the semiconductor device is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). ### Claim 16 (depends on 1) The vertical oriented semiconductor device in accordance with claim 1, wherein the first conductivity type and the second conductivity type comprises any of N-type and P-type semiconductor material.