Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a substrate;
• a channel layer on the substrate;
• a first electrode and a second electrode on two opposite ends of the channel layer, respectively, the first electrode and the second electrode being spaced apart from each other;
• a gate electrode on the channel laver, the gate electrode being spaced apart from the first electrode and the second electrode;
• a gate dielectric material between the channel layer and the gate electrode;
• and
• a chalcogen compound layer being at least one of between the gate dielectric material and the channel layer, between the first electrode and the channel layer, and between the second electrode and the channel layer,
• wherein the channel layer includes an oxide semiconductor compound, and
• wherein the chalcogen compound layer comprises the oxide semiconductor compound and a two-dimensional transition metal dichalcogenide compound.

A method of manufacturing a semiconductor device, the method comprising:

• forming a channel layer in a substrate, the channel layer being an oxide semiconductor compound;
• forming a chalcogen compound layer in the channel layer by doping the oxide semiconductor compound at an upper area of the channel layer with a chalcogen element;
• forming a gate dielectric material;
• forming a first electrode and a second electrode spaced apart from each other;
• and
• forming a gate electrode on the gate dielectric material to be spaced apart from the first electrode and the second electrode,
• wherein the chalcogen compound layer is formed at least one of between the gate dielectric material and the channel layer, between the first electrode and the channel layer, and between the second electrode and the channel layer.