Integrated circuit structures having vertical shared gate high-drive thin film transistors
AssigneeIntel Corporation
InventorsAbhishek Anil Sharma, Sagar Suthram, Wilfred Gomes, Tahir Ghani, Anand S. Murthy, Pushkar Ranade
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Abstract
Structures having vertical shared gate high-drive thin film transistors are described. In an example, an integrated circuit structure includes a stack of alternating dielectric layers and metal layers. A trench is through the stack of alternating dielectric layers and metal layers. A semiconductor channel layer is along sides of the trench. A gate dielectric layer is along sides the semiconductor channel layer in the trench. A gate electrode is within sides of the gate dielectric layer.
Claims19
An integrated circuit structure, comprising:
- a stack of alternating dielectric layers and metal layers, wherein the metal layers include successive drain layers above successive source layers;
- a trench through the stack of alternating dielectric layers and metal layers;
- a semiconductor channel layer along sides and a bottom of the trench;
- a gate dielectric layer along sides and on a bottom of the semiconductor channel layer in the trench;
- and
- a gate electrode within sides and on a bottom of the gate dielectric layer.
An integrated circuit structure, comprising:
- a stack of alternating dielectric layers and metal layers wherein the metal layers include successive drain layers above successive source layers;
- a trench through the stack of alternating dielectric layers and metal layers;
- a semiconductor channel layer along sides and not along a bottom of the trench;
- a gate dielectric layer along sides of the semiconductor channel layer and not along a bottom of the trench;
- and
- a gate electrode within sides of the gate dielectric layer.
A computing device, comprising:
- a board;
- and
- a component coupled to the board, the component including an integrated circuit structure, comprising:
- a stack of alternating dielectric layers and metal layers wherein the metal layers include successive drain layers above successive source layers;
- a trench through the stack of alternating dielectric layers and metal layers;
- a semiconductor channel layer along sides and a bottom of the trench;
- a gate dielectric layer along sides and on a bottom of the semiconductor channel layer in the trench;
- and
- a gate electrode within sides and on a bottom of the gate dielectric layer.
A computing device, comprising:
- a board;
- and
- a component coupled to the board, the component including an integrated circuit structure, comprising:
- a stack of alternating dielectric layers and metal layers wherein the metal layers include successive drain layers above successive source layers;
- a trench through the stack of alternating dielectric layers and metal layers;
- a semiconductor channel layer along sides and not along a bottom of the trench;
- a gate dielectric layer along sides of the semiconductor channel layer and not along a bottom of the trench;
- and
- a gate electrode within sides of the gate dielectric layer.
An integrated circuit structure, comprising:
- a stack of alternating dielectric layers and metal layers;
- a trench through the stack of alternating dielectric layers and metal layers;
- a semiconductor channel layer along sides and a bottom of the trench;
- a gate dielectric layer along sides and on a bottom of the semiconductor channel layer in the trench;
- and
- a gate electrode within sides and on a bottom of the gate dielectric layer, wherein an uppermost layer of the stack of alternating dielectric layers and metal layers is a dielectric layer, and the semiconductor channel layer extends along a top of the top dielectric layer.
Dependencies are inferred from the claim text.