Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• providing a lower electrode on a substrate;
• depositing an oxide channel on the lower electrode;
• doping the oxide channel with anions selected from the group consisting of F (Fluorine), Cl (Chlorine), Br (Bromine), I (Iodine), At (Astatine), and a combination thereof;
• depositing a gate insulator on the oxide channel;
• depositing a gate electrode on the gate insulator;
• and
• depositing an upper electrode on the oxide channel,
• wherein the upper electrode and the lower electrode are spaced apart from each other by the oxide channel in a first direction perpendicular to the substrate,
• the oxide channel includes vertical extension portions extending in the first direction, and
• the upper electrode contacts a top surface of the oxide channel.