Backside wrap around contact structure
AssigneeInternational Business Machines Corporation
InventorsRuilong Xie, Alexander Reznicek, Tsung-Sheng Kang, Sagarika Mukesh
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Abstract
A semiconductor device is provided that includes a transistor located on a frontside of a dielectric layer, the transistor includes a source/drain region located on a first side of a gate structure and a source/drain trench structure located on a second side of the gate structure. The source/drain trench structure extends through the dielectric layer and has an upper portion located on the frontside of the dielectric layer and a lower portion located on the backside of the dielectric layer. A backside wrap around contact structure is present that physically contacts, and wraps around, the lower portion of the source/drain trench structure.
Claims20
A semiconductor device comprising:
- a transistor located on a frontside of a dielectric layer, the transistor comprising a source/drain region located on a first side of a gate structure and a source/drain trench structure located on a second side of the gate structure, wherein the source/drain trench structure extends through the dielectric layer, has an upper portion located on the frontside of the dielectric layer and a lower portion located on the backside of the dielectric layer;
- and
- a backside wrap around contact structure that physically contacts, and wraps around, the lower portion of the source/drain trench structure, wherein the backside wrap around contact structure is in direct contact with the dielectric layer and has a topmost surface that is lower than a bottommost surface of the gate structure.
A semiconductor device comprising
- a transistor located on a frontside of a dielectric layer, the transistor comprising a source/drain region located on a first side of a gate structure and a source/drain trench structure located on a second side of the gate structure, wherein the source/drain trench structure extends through the dielectric layer and an etch stop layer that is located beneath the dielectric layer, has an upper portion located on the frontside of the dielectric layer and a lower portion located on the backside of the dielectric layer;
- and
- a backside wrap around contact structure that physically contacts, and wraps around, the lower portion of the source/drain trench structure, wherein the backside wrap around contact structure is spaced apart from the dielectric layer by the etch stop layer the backside wrap around contact structure is in direct contact with the dielectric layer and has a topmost surface that is lower than a bottommost surface of the gate structure.
Dependencies are inferred from the claim text.