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US 12,764,998 B2Granted
Self-aligned embedded source and drain contacts
AssigneeIntel Corporation
InventorsNitesh Kumar, Willy Rachmady, Cheng-Ying Huang, Rohit Galatage, Patrick Morrow, Marko Radosavljevic, Jami A. Wiedemer, Subrina Rafique, Mauro J. Kobrinsky
Life of this patent
Estimating the term…
Abstract
An integrated circuit structure includes a source or drain region, and a contact for the source or drain region. The contact has (i) an upper portion outside the source or drain region and (ii) a lower portion extending within the source or drain region. For example, the source or drain region wraps around the lower portion of the contact, such that an entire perimeter of the lower portion of the contact is adjacent to the source or drain region.
Claims21
An integrated circuit structure, comprising:
- a source or drain region;
- a contact having (i) an upper portion outside the source or drain region and (ii) a lower portion extending within the source or drain region, wherein the source or drain region wraps around the lower portion of the contact, such that an entire perimeter of the lower portion of the contact is adjacent to the source or drain region;
- and
- a first body of dielectric material on a first side of the source or drain region, and a second body of dielectric material on a second side of the source or drain region, such that the source or drain region is laterally between the first and second bodies of dielectric material, wherein at least a corresponding section of the source or drain region is in contact with each of the first and second bodies of dielectric material;
- wherein a first section of the upper portion of the contact is laterally between the source or drain region and the first body of dielectric material and directly contacting both the source or drain region and the first body of dielectric material, and a second section of the upper portion of the contact is laterally between the source or drain region and the second body of dielectric material and directly contacting both the source or drain region and the second body of dielectric material.
2 more elements
An integrated circuit structure, comprising:
- a first source or drain region of a first device, a second source or drain region of a second device, and a third source or drain region of a third device;
- a first body of dielectric material laterally between the first source or drain region and the second source or drain region, and a second body of dielectric material laterally between the first source or drain region and the third source or drain region;
- a first gate stack and a second gate stack, wherein the first, second, and third source or drain regions are laterally between the first gate stack and the second gate stack;
- and
- a contact having (i) a first portion outside the first source or drain region and (ii) a second portion extending within the first source or drain region, wherein the first portion of the contact is adjacent to the first gate stack, the second gate stack, the first body of dielectric material, and the second body of dielectric material;
- wherein a first section of the first portion of the contact is laterally between the first source or drain region and the first body of dielectric material and directly contacting both the first source or drain region and the first body of dielectric material, and a second section of the first portion of the contact is laterally between the first source or drain region and the second body of dielectric material and directly contacting both the first source or drain region and the second body of dielectric material.
3 more elements
An integrated circuit structure, comprising:
- a source or drain region;
- a contact having (i) an upper portion outside the source or drain region and (ii) a lower portion extending within the source or drain region;
- and
- a body of dielectric material wrapping around the upper portion of the contact, wherein an entire perimeter of the upper portion is directly adjacent to the body of dielectric material;
- wherein a first section of the upper portion of the contact is laterally between the source or drain region and a first side of the body of dielectric material and directly contacting both the source or drain region and the first side of the body of dielectric material, and a second section of the upper portion of the contact is laterally between the source or drain region and a second side of the body of dielectric material and directly contacting both the source or drain region and the second side of the body of dielectric material.
2 more elements
Dependencies are inferred from the claim text.