Gate-all-around transistor with hybrid conduction mechanism and manufacturing method thereof

A gate-all-around transistor with hybrid conduction mechanism, including:

• a GAA MOSFET device, which includes a substrate, a first source region, and a first drain region;
• the first source region and the first drain region are arranged along a first direction;
• wherein, the first source region and the first drain region are doped with first ions;
• wherein, the first direction represents a direction parallel to the substrate;
• a second source region and a second drain region, the second source region is formed between the substrate and the first source region, and the second drain region is formed between the substrate and the first drain region, and a location of a top surface of the second source region in a direction perpendicular to the substrate and a location of a top surface of the second drain region in the direction perpendicular to the substrate are not lower than a location of a top surface of the substrate in the direction perpendicular to the substrate between the first source region and the first drain region;
• wherein, the second drain region is doped with the first ions, and the second source region is doped with second ions, and the type of the first ions is different from the type of the second ions.