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US 12,764,991 B2Granted
Semiconductor device, semiconductor module, and wireless communication apparatus
AssigneeSony Semiconductor Solutions Corporation
InventorsKatsuji Matsumoto, Naoki Kakoiyama
Life of this patent
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Abstract
Provided is a semiconductor device having high heat dissipation and high operation reliability. This semiconductor device includes a semiconductor substrate, a first semiconductor layer that is provided on the semiconductor substrate, has a first aperture, and has a first thermal conductivity, a transistor (Tr) provided on the first semiconductor layer, and a heat dissipation unit that is in contact with the semiconductor substrate via the first aperture and has a second thermal conductivity higher than the first thermal conductivity.
Claims12
A semiconductor device, comprising:
- a semiconductor substrate;
- a first semiconductor layer on the semiconductor substrate, wherein the first semiconductor layer has
- a first aperture, and
- a first thermal conductivity;
- a transistor on the first semiconductor layer;
- a heat dissipation unit in contact with the semiconductor substrate via the first aperture, wherein the heat dissipation unit has a second thermal conductivity higher than the first thermal conductivity;
- and
- a plurality of transistors, wherein
- the plurality of transistors include the transistor,
- the plurality of transistors is arranged to be adjacent to each other in a first direction,
- each of the plurality of transistors includes a gate electrode that extends in a second direction perpendicular to the first direction, and
- the plurality of transistors satisfies a following condition expression (A):
- (L2/L1)≤2 (A)
- where L1 is a length of the gate electrode of each of the plurality of transistors in the second direction, and L2 is a distance in the second direction between a center position of the heat dissipation unit in the second direction and a center position of the gate electrode of each of the plurality of transistors in the second direction.
11 more elements
A semiconductor module, comprising:
- a semiconductor device including
- a semiconductor substrate,
- a first semiconductor layer on the semiconductor substrate, wherein the first semiconductor layer has
- a first aperture, and
- a first thermal conductivity,
- a transistor on the first semiconductor layer,
- a heat dissipation unit in contact with the semiconductor substrate via the first aperture, wherein the heat dissipation unit has a second thermal conductivity higher than the first thermal conductivity,
- a plurality of transistors, wherein
- the plurality of transistors include the transistor,
- the plurality of transistors is arranged to be adjacent to each other in a first direction,
- each of the plurality of transistors includes a gate electrode that extends in a second direction perpendicular to the first direction, and
- the plurality of transistors satisfies a following condition expression (A):
- (L2/L1)≤2 (A)
- where L1 is a length of the gate electrode of each of the plurality of transistors in the second direction, and L2 is a distance in the second direction between a center position of the heat dissipation unit in the second direction and a center position of the gate electrode of each of the plurality of transistors in the second direction.
11 more elements
A wireless communication apparatus, comprising:
- a semiconductor device including
- a semiconductor substrate,
- a first semiconductor layer on the semiconductor substrate, wherein the first semiconductor layer has
- a first aperture, and
- a first thermal conductivity,
- a transistor on the first semiconductor layer,
- a heat dissipation unit in contact with the semiconductor substrate via the first aperture, wherein the heat dissipation unit has a second thermal conductivity higher than the first thermal conductivity, and
- a plurality of transistors, wherein
- the plurality of transistors include the transistor,
- the plurality of transistors is arranged to be adjacent to each other in a first direction,
- each of the plurality of transistors includes a gate electrode that extends in a second direction perpendicular to the first direction, and
- the plurality of transistors satisfies a following condition expression (A):
- (L2/L1)≤2 (A)
- where L1 is a length of the gate electrode of each of the plurality of transistors in the second direction, and L2 is a distance in the second direction between a center position of the heat dissipation unit in the second direction and a center position of the gate electrode of each of the plurality of transistors in the second direction.
11 more elements
Dependencies are inferred from the claim text.