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AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsHitoshi Kobayashi, Masaaki Onomura, Toru Sugiyama, Akira Yoshioka, Hung Hung, Hideki Sekiguchi, Tetsuya Ohno, Yasuhiro Isobe
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A semiconductor device of an embodiment includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a first electrode film provided on the first insulating film, a second electrode film provided on the first electrode film, and a first field plate electrode provided on the second electrode film. A lower end of the first field plate electrode is located on a second surface of the first electrode film, the second surface being in contact with the second electrode film, rather than a first surface of the first electrode film, the first surface being in contact with the first insulating film.
A semiconductor device comprising:
A method of manufacturing a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.