US 12,764,979 B2 · Semiconductor structure with a deep trench capacitor structures and forming method thereof

Abstract

The invention provides a semiconductor structure with a deep trench capacitor structures, which comprises a substrate, the substrate comprises a bottle-shaped trench, wherein the bottle-shaped trench has an upper part and a lower part in a cross section, and the interface between the upper part and the lower part is a bottleneck line, wherein the bottleneck line is the part with the smallest width in the bottle-shaped trench, a first dielectric layer is filled in the bottle-shaped trench, and a void is located in the first dielectric layer, wherein the highest point of the void is lower than the bottleneck line.

Claims18

Dependent claims

A semiconductor structure with a deep trench capacitor, comprising:

a substrate, which contains a bottle-shaped trench, wherein the bottle-shaped trench has an upper part and a lower part in a cross section, and the interface between the upper part and the lower part is a bottleneck line, wherein the bottleneck line is the part with the smallest width in the bottle-shaped trench, wherein the bottle-shaped trench has a top surface and a bottom surface, wherein the length from the top surface to the bottleneck line in a vertical direction is defined as H1, and the length from the bottom surface to the bottleneck line in the vertical direction is defined as H2, where H1/H2 is less than 0.15;
a first dielectric layer filled in the bottle-shaped trench;
and
a void located in the first dielectric layer, wherein a highest point of the void is lower than the bottleneck line.

1 more element

A method for forming a semiconductor structure with a deep trench capacitor structure, comprising:

providing a substrate, wherein a bottle-shaped trench is formed in the substrate, wherein the bottle-shaped trench has an upper part and a lower part as viewed from a cross section, and the interface between the upper part and the lower part is a bottleneck line, wherein the bottleneck line is the part with the smallest width in the bottle-shaped trench, wherein the bottle-shaped trench has a top surface and a bottom surface, wherein the length from the top surface to the bottleneck line in a vertical direction is defined as H1, and the length from the bottom surface to the bottleneck line in the vertical direction is defined as H2, where H1/H2 is less than 0.15;
and
forming a first dielectric layer to fill the bottle-shaped trench, wherein the first dielectric layer comprises a void in the first dielectric layer, and a highest point of the void is lower than the bottleneck line.

Dependencies are inferred from the claim text.

Facts

Application

18/583,828Filed 21 Feb 2024

Priority

TW 11310195618 Jan 2024

Published

US 2025/0240985 A124 Jul 2025

Granted

13 Oct 2026

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 1/665
Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors: trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
H10D 1/047
Of capacitors having potential barriers, e.g. varactors: of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
H10D 84/212
Of combinations of diodes or capacitors or resistors: of only capacitors
H10W 20/089
By forming openings in the dielectric parts: using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning

Semiconductor structure with a deep trench capacitor structures and forming method thereof

Life of this patent

Semiconductor structure with a deep trench capacitor structures and forming method thereof

Life of this patent

Abstract

Claims18