# US 12,764,977 B2 · Capacitor component

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- Number: US 12,764,977 B2
- Document ID: US12764977B2
- Status: Granted
- Kind: B2
- Application number: 18/388,992
- Filed: 2023-11-13
- Published: 2024-08-22
- Granted: 2026-10-13
- Earliest claimed: 2023-02-16
- Assignees: Samsung Electro-Mechanics Co., Ltd.
- Applicants: Samsung Electro-Mechanics Co., Ltd.
- Inventors: Jae Hoon Kim; Hye Jin Kim; Gyoung Heon Ko; Jang Won Lee
- Web page: https://patentgrep.com/patent/US12764977B2

## CPC

- H10D 1/042: {using deposition processes to form electrode extensions}
- H10D 1/716: {having vertical extensions}
- H10W 20/496: {Capacitor integral with wiring layers}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A capacitor component including: a first capacitor structure including a substrate having a plurality of first trenches disposed on one surface of the substrate, and a first capacitor layer disposed on the one surface of the substrate and inner walls of the plurality of first trenches, the first capacitor layer including a first dielectric layer and first and second electrodes disposed to face each other with the first dielectric layer interposed therebetween; a second capacitor structure disposed on the first capacitor structure, and including an insulating layer having a plurality of second trenches disposed on one surface of the insulating layer, and a second capacitor layer disposed on the one surface of the insulating layer and inner walls of the plurality of second trenches, the second capacitor layer including a second dielectric layer and third and fourth electrodes disposed to face each other with the second dielectric layer interposed therebetween.

## Claims

### Claim 1

A capacitor component, comprising:
a first capacitor structure including a substrate having a plurality of first trenches disposed on one surface of the substrate, and a first capacitor layer disposed on the one surface of the substrate and inner walls of the plurality of first trenches, the first capacitor layer including a first dielectric layer and first and second electrodes disposed to face each other with the first dielectric layer interposed therebetween;
a second capacitor structure disposed on the first capacitor structure, and including an insulating layer having a plurality of second trenches disposed on one surface of the insulating layer, and a second capacitor layer disposed on the one surface of the insulating layer and inner walls of the plurality of second trenches, the second capacitor layer including a second dielectric layer and third and fourth electrodes disposed to face each other with the second dielectric layer interposed therebetween;
first and second wiring structures penetrating through the insulating layer;
first and second external electrodes disposed on the insulating layer, and respectively connected to the first and second electrodes through the first and second wiring structures; and
third and fourth external electrodes disposed on the insulating layer, and respectively connected to the third and fourth electrodes.

### Claim 2 (depends on 1)

The capacitor component of claim 1, wherein the substrate is a silicon substrate, and
the insulating layer comprises silicon oxide.

### Claim 3 (depends on 1)

The capacitor component of claim 1, wherein when an interval between adjacent trenches among the plurality of first trenches is D1, an interval between adjacent trenches among the plurality of second trenches is D2, a depth of a trench among the plurality of first trenches is T1, and a depth of a trench among the plurality of second trenches is T2, D1>D2 and/or T1>T2 are satisfied.

### Claim 4 (depends on 1)

The capacitor component of claim 1, wherein the first capacitor structure further includes:
a first connection electrode disposed to be in contact with the first electrode and connecting the first electrode and the first wiring structure, and
a second connection electrode disposed to be in contact with the second electrode and connecting the second electrode and the second wiring structure.

### Claim 5 (depends on 4)

The capacitor component of claim 4, wherein the first wiring structure comprises:
a first via electrode penetrating through the insulating layer, wherein one end of the first via electrode is in contact with the first connection electrode, and
a plurality of first wiring layers stacked on the first via electrode, and
the second wiring structure comprises:
a second via electrode penetrating through the insulating layer, wherein one end of the second via electrode is in contact with the second connection electrode, and
a plurality of second wiring layers stacked on the second via electrode.

### Claim 6 (depends on 5)

The capacitor component of claim 5, further comprising:
a first separator disposed on an outer surface of the first via electrode, and
a second separator disposed on an outer surface of the second via electrode.

### Claim 7 (depends on 1)

The capacitor component of claim 1, wherein an interior of the plurality of first trenches is filled with a first conductive filler, and
an interior of the plurality of second trenches is filled with a second conductive filler.

### Claim 8 (depends on 1)

The capacitor component of claim 1, further comprising:
an intermediate insulating film including silicon oxide and disposed to cover the first capacitor structure.

### Claim 9 (depends on 8)

The capacitor component of claim 8, further comprising:
an intermediate metal film disposed between the intermediate insulating film and the second capacitor structure.

### Claim 10 (depends on 9)

The capacitor component of claim 9, wherein the plurality of second trenches penetrate through the insulating layer, and
the fourth electrode and the intermediate metal film are in contact on lower surfaces of the plurality of second trenches.

### Claim 11 (depends on 1)

The capacitor component of claim 1, further comprising:
a plurality of third wiring structures connecting the third electrode and the third external electrode, and spaced apart from each other,
a plurality of fourth wiring structures connecting the fourth electrode and the fourth external electrode, and spaced apart from each other, and
a circuit layer connecting the plurality of third wiring structures and the third external electrode, and connecting the plurality of fourth wiring structures and the fourth external electrode.

### Claim 12 (depends on 11)

The capacitor component of claim 11, wherein the circuit layer comprises:
a first circuit pattern connecting the plurality of third wiring structures and the third external electrode, and
a second circuit pattern connecting the plurality of fourth wiring structures and the fourth external electrode.

### Claim 13 (depends on 1)

The capacitor component of claim 1, further comprising:
an upper insulating film disposed between an upper surface of the insulating layer and lower surfaces of the first to fourth external electrodes and covering at least a portion of the first and second wiring structures.

### Claim 14 (depends on 1)

The capacitor component of claim 1, wherein the first to fourth external electrodes respectively includes a plurality of external electrodes, and
the plurality of first external electrodes is connected to the first electrode.

### Claim 15

A capacitor component, comprising:
a first capacitor structure including a substrate having a plurality of first trenches disposed on one surface of the substrate, and a first capacitor layer disposed on the one surface of the substrate and inner walls of the plurality of first trenches, the first capacitor layer including a first dielectric layer and first and second electrodes disposed to face each other with the first dielectric layer interposed therebetween;
a second capacitor structure disposed on the first capacitor structure, and including an insulating layer having a plurality of second trenches disposed on one surface of the insulating layer, and a second capacitor layer disposed on the one surface of the insulating layer and inner walls of the plurality of second trenches, the second capacitor layer including a second dielectric layer and third and fourth electrodes disposed to face each other with the second dielectric layer interposed therebetween,
first and second external electrodes disposed on the insulating layer, and connected to the first and second electrodes, respectively; and
third and fourth external electrodes disposed on the insulating layer, and connected to the third and fourth electrodes, respectively,
wherein the insulating layer includes silicon oxide, and
when an interval between adjacent trenches among the plurality of first trenches is D1, an interval between adjacent trenches among the plurality of second trenches is D2, a depth of a trench among the plurality of first trenches is T1, and a depth of a trench among the plurality of second trenches is T2, D1>D2 and/or T1>T2 are satisfied.

### Claim 16 (depends on 15)

The capacitor component of claim 15, further comprising:
first and second wiring structures penetrating through the insulating layer,
wherein the first and second external electrodes are connected to the first and second electrodes, respectively, through the first and second wiring structures, respectively.

### Claim 17 (depends on 16)

The capacitor component of claim 16, wherein the first wiring structure comprises:
a first via electrode penetrating through the insulating layer, and
a plurality of first wiring layers stacked on the first via electrode, and
the second wiring structure comprises:
a second via electrode penetrating through the insulating layer, and
a plurality of second wiring layers stacked on the second via electrode.

### Claim 18 (depends on 17)

The capacitor component of claim 17, wherein the first wiring structure does not connect the first electrode to the third electrode.

### Claim 19 (depends on 17)

The capacitor component of claim 17, wherein the second wiring structure does not connect the second electrode to the fourth electrode.

### Claim 20 (depends on 16)

The capacitor component of claim 16, wherein the first to fourth external electrodes respectively includes a plurality of external electrodes, and
the plurality of first external electrodes is connected to the first electrode.