Back to results
US 12,764,959 B2Granted
Semiconductor memory device
AssigneeSK hynix Inc.
InventorSung Wook Jung
Life of this patent
Estimating the term…
Abstract
There is provided a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a first gate stacked body including a first channel hole, a second gate stacked body overlapping the first gate stacked body and including a second channel hole, a first memory layer extending along an inner wall of the first channel hole, a second memory layer extending along an inner wall of the second channel hole and including an end protruding into the first channel hole.
Claims11
A semiconductor memory device, comprising:
- a first gate stacked body including a first channel hole;
- a second gate stacked body overlapping the first gate stacked body and including a second channel hole;
- a first memory layer extending along an inner wall of the first channel hole;
- and
- a second memory layer extending along an inner wall of the second channel hole and including an end protruding into the first channel hole.
2 more elements
Dependencies are inferred from the claim text.