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US 12,764,957 B2Granted
Memory device including aluminum nitride diffusion barrier layer and methods for forming the same
AssigneeSanDisk Technologies LLC
InventorsRahul Sharangpani, Raghuveer S. Makala, Fei Zhou
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Abstract
A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and containing a memory film, a vertical semiconductor channel, and an aluminum nitride layer that laterally surrounds the memory film.
Claims8
A semiconductor structure, comprising:
- an alternating stack of insulating layers and electrically conductive layers;
- a memory opening vertically extending through the alternating stack;
- and
- a memory opening fill structure located in the memory opening and comprising a memory film, a vertical semiconductor channel, an aluminum nitride layer that laterally surrounds the memory film, and an aluminum oxide layer located between the aluminum nitride layer and the memory film,
- wherein each of the electrically conductive layers comprises a metallic nitride barrier layer that is in contact with a respective cylindrical segment of an outer sidewall of the aluminum nitride layer.
2 more elements
A semiconductor structure, comprising:
- an alternating stack of insulating layers and electrically conductive layers;
- a memory opening vertically extending through the alternating stack;
- and
- a memory opening fill structure located in the memory opening and comprising a memory film, a vertical semiconductor channel, an aluminum nitride layer that laterally surrounds the memory film, and an aluminum oxide layer located between the aluminum nitride layer and the memory film,
- wherein each of the electrically conductive layers comprises:
- a boron containing nucleation layer that is in contact with a respective cylindrical segment of an outer sidewall of the aluminum nitride layer;
- and
- a metallic fill material layer contacting a bottom surface of an upper horizontally-extending portion of the boron containing nucleation layer, contacting a top surface of a lower horizontally-extending portion of the boron containing nucleation layer, and contacting a cylindrical outer surface of a tubular portion of the boron containing nucleation layer.
5 more elements
A semiconductor structure, comprising:
- an alternating stack of insulating layers and electrically conductive layers;
- a memory opening vertically extending through the alternating stack;
- and
- a memory opening fill structure located in the memory opening and comprising a memory film, a vertical semiconductor channel, an aluminum nitride layer that laterally surrounds the memory film, and an aluminum oxide layer located between the aluminum nitride layer and the memory film, wherein the aluminum oxide layer comprises a nitrogen doped aluminum oxide layer in which an atomic concentration of nitrogen atoms decreases with increasing distance from the aluminum nitride layer.
1 more element
Dependencies are inferred from the claim text.