Semiconductor memory device
AssigneeKioxia Corporation
InventorKeisuke Nakatsuka
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device according to an embodiment includes a substrate, a first conductor layer, second conductor layers, a first semiconductor layer, a pillar, and a contact. The pillar has a portion provided to penetrate the second conductor layers and the first semiconductor layer. The contact is electrically connected to the pillar and the first conductor layer. The pillar includes a second semiconductor layer, a first insulator layer provided at least between the second semiconductor layer and the second conductor layers, and a third semiconductor layer provided between the second semiconductor layer and the first semiconductor layer and in contact with each of the second semiconductor layer and the first semiconductor layer.
Claims10
A semiconductor memory device comprising:
- a substrate;
- a first conductor layer having a portion provided to extend in a first direction in a first layer above the substrate;
- a plurality of second conductor layers provided to be apart from each other in a second direction intersecting the first direction above the first layer;
- a first semiconductor layer having a portion provided to spread in a third direction intersecting each of the first direction and the second direction, and the first direction, in a layer above the plurality of second conductor layers;
- a pillar provided to extend in the second direction and having a portion provided to penetrate the plurality of second conductor layers and the first semiconductor layer;
- and
- a contact electrically connected to the pillar and the first conductor layer,
- wherein
- the pillar includes a second semiconductor layer provided to extend in the second direction, a first insulator layer provided at least between the second semiconductor layer and the plurality of second conductor layers, and a third semiconductor layer provided between the second semiconductor layer and the first semiconductor layer and in contact with each of the second semiconductor layer and the first semiconductor layer.
Dependencies are inferred from the claim text.