# US 12,764,948 B2 · Semiconductor device and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,764,948 B2 - Document ID: US12764948B2 - Status: Granted - Kind: B2 - Application number: 17/931,569 - Filed: 2022-09-13 - Published: 2023-09-21 - Granted: 2026-10-13 - Earliest claimed: 2022-03-15 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Hidekazu Hayashi - Web page: https://patentgrep.com/patent/US12764948B2 ## CPC - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B: ELECTRONIC MEMORY DEVICES ## Abstract In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a first substrate, forming a porous layer in a first portion of the first film and a non-porous layer in a second portion of the first film, forming a second film including a first device on the first film, forming a third film including a second device on a second substrate, and bonding the second film on the first substrate and the third film on the second substrate to be opposite to each other. Furthermore, the semiconductor device includes a first region and a second region. Moreover, the first device and the second device are located in the first region, the first portion is located among the first region and the second region, and the second portion is located in the second region. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, comprising: forming a first film on a first substrate; forming a porous layer in a first portion of the first film and a non-porous layer in a second portion of the first film, wherein the second portion is a portion different from the first portion, and is located in a direction along a surface of the first substrate relative to the first portion; forming a second film including a first device on the first film; forming a third film including a second device on a second substrate; and bonding the second film on the first substrate and the third film on the second substrate to be opposite to each other, wherein the semiconductor device includes a first region and a second region, the first region being located closer to a center of the first substrate than the second region, and the first device and the second device are located in the first region, the first portion is located among the first region and the second region, and the second portion is located only in the second region. ### Claim 2 (depends on 1) The method of claim 1, further comprising separating the first substrate and the second film after bonding the first substrate and the second substrate, wherein the separating produces a crack in the second region, and guides the crack into the porous layer. ### Claim 3 (depends on 1) The method of claim 1, wherein when seen in a direction vertical to a bonding face between the second film and the third film, an end of the first portion is located outside an end of the bonding face relative to a center of the semiconductor device. ### Claim 4 (depends on 1) The method of claim 1, wherein the first film includes a semiconductor layer formed on the first substrate, and a cap film formed on the semiconductor layer, and the porous layer and the non-porous layer are formed in the semiconductor layer. ### Claim 5 (depends on 1) The method of claim 1, wherein when seen in a direction vertical to a bonding face between the second film and the third film, the second region is located outside the first region. ### Claim 6 (depends on 5) The method of claim 5, wherein the first region is an effective chip region. ### Claim 7 (depends on 1) The method of claim 1, further comprising forming a first layer that extends across the first film and the second film located in the second region after forming the porous layer and before bonding the first substrate and the second substrate. ### Claim 8 (depends on 7) The method of claim 7, wherein when seen in a direction vertical to a bonding face between the second film and the third film, an end of the first portion is located outside the first layer relative to a center of the semiconductor device. ### Claim 9 (depends on 7) The method of claim 7, further comprising separating the first substrate and the second film after bonding the first substrate and the second substrate, wherein when seen in a direction vertical to a bonding face between the second film and the third film, the first layer has an annular shape, and the separating produces a crack in the second region, and then guides the crack into the porous layer at a position outside the first layer. ### Claim 10 (depends on 1) The method of claim 1, further comprising forming an air gap or a laser absorbing layer in the first film located in the second region after forming the porous layer and before bonding the first substrate and the second substrate. ### Claim 11 (depends on 1) The method of claim 1, wherein the first device and the second device are not located in the second region. ### Claim 12 A semiconductor device comprising: a first substrate; a second substrate opposite to the first substrate; a first film provided between the first substrate and the second substrate, and including a semiconductor layer; a second film provided between the first film and the second substrate, and including a first device; and a third film provided between the second film and the second substrate, and including a second device, wherein the semiconductor layer includes a first portion including a porous layer, and a second portion including a non-porous layer, the second portion being a portion different from the first portion, and being located in a direction along a surface of the first substrate relative to the first portion, the semiconductor device includes a first region and a second region, the first region being located closer to a center of the first substrate than the second region, and the first device and the second device are located in the first region, the first portion is located among the first region and the second region, and the second portion is located only in the second region. ### Claim 13 (depends on 12) The device of claim 12, wherein the first substrate has a disc-like shape. ### Claim 14 (depends on 12) The device of claim 12, further comprising a first layer that extends across the first film and the second film located in the second region. ### Claim 15 (depends on 12) The device of claim 12, further comprising an air gap or a laser absorbing layer in the first film located in the second region. ### Claim 16 (depends on 12) The device of claim 12, wherein the second region is located on an outer circumference of the first region. ### Claim 17 (depends on 16) The device of claim 16, wherein the second region annularly surrounds the first region in plan view. ### Claim 18 A method of manufacturing a semiconductor device, comprising: preparing a semiconductor device including a first substrate, a second substrate opposite to the first substrate, a first film provided between the first substrate and the second substrate and including a semiconductor layer, a second film provided between the first film and the second substrate and including a first device, and a third film provided between the second film and the second substrate and including a second device, the semiconductor layer including a first portion including a porous layer, and a second portion including a non-porous layer, the second portion being a portion different from the first portion, and being located in a direction along a surface of the first substrate relative to the first portion, the semiconductor device including a first region and a second region, the first region being located closer to a center of the first substrate than the second region, the first device and the second device being located in the first region, the first portion being located among the first region and the second region, and the second portion being located only in the second region; and detaching the first substrate and the second substrate with an interposition of the semiconductor layer. ### Claim 19 (depends on 18) The method of claim 18, wherein the semiconductor device as prepared further includes a first layer that extends across the first film and the second film located in the second region. ### Claim 20 (depends on 18) The method of claim 18, wherein the semiconductor device as prepared further includes an air gap or a laser absorbing layer in the first film located in the second region.