# US 12,764,947 B2 · Staircase connection structure for three-dimensional memory devices

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- Number: US 12,764,947 B2
- Document ID: US12764947B2
- Status: Granted
- Kind: B2
- Application number: 18/323,227
- Filed: 2023-05-24
- Published: 2024-10-24
- Granted: 2026-10-13
- Earliest claimed: 2023-04-23
- Assignees: Yangtze Memory Technologies Co., Ltd.
- Applicants: Yangtze Memory Technologies Co., Ltd.
- Inventors: Kun Zhang; Linchun Wu; Cuicui Kong; Wenxi Zhou; Zhiliang Xia; Zongliang Huo
- Web page: https://patentgrep.com/patent/US12764947B2

## CPC

- H10B 41/20: characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/10: characterised by the top-view layout
- H10B 43/20: characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/35: with cell select transistors, e.g. NAND
- H10B 51/20: characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B 53/20: characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A memory device can include channel structures in a first region. The memory device can also include a plurality of word line cavity structures in a second region abutting the first region. The plurality of word line cavity structures can extend along a first direction. Each of the word line cavity structures can include a first contact structure in a first side of the word line cavity structure along a second direction perpendicular to the first direction. Each of the word line cavity structures can also include a second contact structure in a second side of the word line cavity structure along the second direction. The second side can be opposite to the first side. Each of the word line cavity structures can further include a slit structure. The first contact structure and the second contact structure can be separated with the slit structure along the second direction.

## Claims

### Claim 1

A memory device, comprising:
channel structures in a first region;
a plurality of word line cavity structures in a second region abutting the first region, wherein the plurality of word line cavity structures extend along a first direction, and
wherein each of the word line cavity structures comprises:
a first contact structure in a first side of the word line cavity structure along a second direction perpendicular to the first direction, and a second contact structure in a second side of the word line cavity structure along the second direction, wherein the second side is opposite to the first side; and
a slit structure, wherein the first contact structure and the second contact structure are separated with the slit structure along the second direction.

### Claim 2 (depends on 1)

The memory device of claim 1, the first contact structure or the second contact structure comprises a lateral contact portion positioned along the second direction and extending along the first direction.

### Claim 3 (depends on 2)

The memory device of claim 2, the first contact structure or the second contact structure comprises a vertical contact portion connected with the lateral contact portion.

### Claim 4 (depends on 1)

The memory device of claim 1, the first contact structure or the second contact structure comprises a gate dielectric layer, a first conductive material layer and a second conductive material layer.

### Claim 5 (depends on 1)

The memory device of claim 1, wherein the first and second directions are parallel to a top surface of a substrate.

### Claim 6 (depends on 1)

The memory device of claim 1, wherein the plurality of the word line cavity structures form a staircase structure in the second region and wherein the each of the plurality of the word line cavity structures form a step in the staircase structure in the second region.

### Claim 7 (depends on 6)

The memory device of claim 6, and wherein a number of steps increases along the first direction.

### Claim 8 (depends on 6)

The memory device of claim 6, wherein a number of steps decreases along the first direction.

### Claim 9 (depends on 1)

The memory device of claim 1, the plurality of word line cavity structures further comprising:
a first word line cavity structure, and
a second word line cavity structure, wherein the first word line cavity structure is located at a different height in a third direction than the second word line cavity structure, wherein the third direction is orthogonal to the first direction and the second direction.

### Claim 10 (depends on 9)

The memory device of claim 9, wherein the first word line cavity structure comprises a first width in the second direction, the second word line cavity structure comprises a second width in the second direction, wherein the first width and the second width is approximately the same.

### Claim 11 (depends on 9)

The memory device of claim 9, wherein the first word line cavity structure is aligned with the second word line cavity structure at a same location along the first direction.

### Claim 12 (depends on 9)

The memory device of claim 9, wherein the first word line cavity structure is not electrically connected with the second word line cavity structure.

### Claim 13 (depends on 9)

The memory device of claim 9, the plurality of word line cavity structures further comprising:
a third word line cavity structure, wherein the second word line cavity structure is located at a same height in the third direction as the second word line cavity structure.

### Claim 14 (depends on 13)

The memory device of claim 13, wherein the third word line cavity structure is electrically connected with the second word line cavity structure.

### Claim 15 (depends on 13)

The memory device of claim 13, wherein the third word line cavity structure is separated by a distance with the second word line cavity structure in the first direction.

### Claim 16 (depends on 13)

The memory device of claim 13, wherein the first word line cavity structure, the second word line cavity structure, and the third word line cavity structure form a staircase structure in the second region.

### Claim 17 (depends on 13)

The memory device of claim 13, wherein the second word line cavity structure and the third word line cavity structure are connected with a conductive path to the channel structures.

### Claim 18 (depends on 1)

The memory device of claim 1, wherein an electrical conductivity of the each of the word line cavity structures is associated with a cross-sectional area of the first contact structure and the second contact structure, and wherein the cross-sectional area comprises the cross-sectional area in the first direction and the second direction.

### Claim 19 (depends on 1)

The memory device of claim 1, wherein the first contact structure is separated with the slit structure by a first distance in the second direction, wherein the second contact structure is separated with the slit structure by a second distance in the second direction, and wherein the first distance is substantially the same as the second distance.

### Claim 20

A memory system, comprising:
a controller; and
a memory device coupled to the controller, the memory device comprising:
channel structures in a first region;
a plurality of word line cavity structures in a second region abutting the first region, wherein the plurality of word line cavity structures extend along a first direction, and
wherein each of the word line cavity structures comprises:
a first contact structure in a first side of the word line cavity structure along a second direction perpendicular to the first direction, and a second contact structure in a second side of the word line cavity structure along the second direction, wherein the second side is opposite to the first side; and
a slit structure, wherein the first contact structure and the second contact structure are separated with the slit structure along the second direction.