Semiconductor device and method for forming same

A method for forming a semiconductor device, comprising:

• providing a substrate comprising a memory region and a peripheral region located at an outer side of the memory region;
• and
• forming a memory structure in the memory region and forming a peripheral structure in the peripheral region;
• the memory structure comprising a memory array and a plurality of signal lines, the memory array comprising memory cells spaced apart from each other, and the signal lines being electrically connected with the memory cells, wherein the signal lines comprises first signal lines and second signal lines, the first signal lines extends along a first direction and the second signal lines extend along a second direction intersecting the first direction, the memory structure further comprises signal line plugs, the signal line plugs comprise first signal line plugs electrically connected to the first signal lines and second signal line plugs electrically connected to the second signal lines;
• the peripheral structure comprising peripheral stacked layers, peripheral circuits located above the peripheral stacked layers, and a plurality of peripheral leads located above the peripheral circuits, one end of each of the peripheral leads being electrically connected with at least one of the peripheral circuits, and the other end being electrically connected with at least one of the signal lines, wherein the peripheral circuits comprise first peripheral circuits and second peripheral circuits, the peripheral leads comprise first peripheral leads and second peripheral leads, the first peripheral leads are electrically connected to the first peripheral circuits, the second peripheral leads are electrically connected to the second peripheral circuits;
• forming first connecting bridges electrically connecting the first signal line plugs and the first peripheral leads, and second connecting bridges electrically connecting the second signal line plugs and the second peripheral leads, wherein the second connecting bridges extend from the second signal lines to the second peripheral circuits along a third direction, the first connecting bridges extend from the first signal lines to the first peripheral circuits along the third direction, and the third direction intersecting the first direction and the second direction and is parallel to a top surface, on which the memory structure and the peripheral structure are formed, of the substrate.