# US 12,764,944 B2 · Semiconductor structure, method for forming semiconductor strucutre, and memory

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- Number: US 12,764,944 B2
- Document ID: US12764944B2
- Status: Granted
- Kind: B2
- Application number: 18/366,819
- Filed: 2023-08-08
- Published: 2024-02-29
- Granted: 2026-10-13
- Earliest claimed: 2022-08-24
- Assignees: Changxin Memory Technologies, Inc.
- Applicants: Changxin Memory Technologies, Inc.
- Inventors: Qinghua Han
- Web page: https://patentgrep.com/patent/US12764944B2

## CPC

- H10B 12/488: {Word lines}
- H10B 12/02: {for one transistor one-capacitor [1T-1C] memory cells}
- H10B 12/482: {Bit lines}
- H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates}
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor structure, a method for forming a semiconductor structure, and a memory are provided. The method for forming the semiconductor structure in the disclosure includes: providing a base, the base including a substrate and an insulating dielectric layer, the substrate including a plurality of first trenches spaced apart from each other in a first direction, and the insulating dielectric layer being filled in each of the plurality of first trenches; patterning and etching the base to form a plurality of second trenches spaced apart from each other in a second direction, the second direction intersecting with the first direction; forming a word line structure in each of the plurality of second trenches; forming an air gap between each two adjacent word line structures of a plurality of word line structures; and sealing the air gap.

## Claims

### Claim 1

A method for forming a semiconductor structure, comprising:
providing a base, wherein the base comprises a substrate and an insulating dielectric layer, the substrate comprises a plurality of first trenches spaced apart from each other in a first direction, and the insulating dielectric layer is filled in each of the plurality of first trenches;
patterning and etching the base to form a plurality of second trenches spaced apart from each other in a second direction, wherein the second direction intersects with the first direction;
forming a word line structure in each of the plurality of second trenches;
forming an air gap between each two adjacent word line structures of a plurality of word line structures; and
sealing the air gap;
forming an insulating layer between said each two adjacent word line structures of the plurality of word line structures, wherein the air gap is located within the insulating layer;
wherein forming the insulating layer comprises:
forming a protective layer adaptively attached to a sidewall of each of the plurality of second trenches;
forming a first insulating material layer on a surface of a structure collectively formed by the base and the protective layer;
forming a first insulating layer within each of the plurality of second trenches provided with the first insulating material layer, wherein a top portion of the first insulating layer is lower than a top portion of the first insulating material layer;
forming a second insulating material layer on the top portion of the first insulating layer;
planarizing a surface of the second insulating material layer to allow a top portion of the second insulating material layer to be flush with a surface of the substrate, wherein a remaining portion of the second insulating material layer and the first insulating material layer collectively form a second insulating layer;
etching back the protective layer and the insulating dielectric layer to form an insulating gap;
filling an insulating material in the insulating gap, wherein the insulating material and the second insulating layer collectively form a passivation layer; and
removing a preset thickness of the protective layer in a direction perpendicular to the substrate to form a plurality of word line filling trenches, wherein a bottom portion of each of the plurality of second trenches is unexposed by a respective one of the plurality of word line filling trenches.

### Claim 2 (depends on 1)

The method according to claim 1, wherein
forming the plurality of word line structures comprises:
forming an inter-gate dielectric layer at a bottom portion of each of the plurality of word line filling trenches and on a sidewall of each of the plurality of word line filling trenches away from the insulating layer; and
filling a first conductive material within each of the plurality of word line filling trenches provided with the inter-gate dielectric layer to form the plurality of word line structures.

### Claim 3 (depends on 1)

The method according to claim 1, wherein
forming the air gap comprises:
etching back the passivation layer after forming the plurality of word line structures, until the first insulating layer is exposed; and
removing the first insulating layer to form the air gap.

### Claim 4 (depends on 3)

The method according to claim 3, wherein
sealing the air gap comprises:
forming a sealing layer on a surface of the passivation layer provided with the air gap,
wherein the sealing layer at least covers an opening of the air gap.

### Claim 5 (depends on 1)

The method according to claim 1, further comprising:
forming a bit line structure at the bottom portion of each of the plurality of second trenches before forming the plurality of word line structures, wherein the bit line structure traverses the plurality of second trenches, and the bit line structure is insulated from the plurality of word line structures.

### Claim 6 (depends on 5)

The method according to claim 5, wherein
forming the bit line structure comprises:
removing a portion of the substrate located below the plurality of second trenches to form a third trench below the plurality of second trenches, wherein the third trench penetrates through the plurality of second trenches; and
filling a second conductive material within the third trench to form the bit line structure.

### Claim 7 (depends on 5)

The method according to claim 5, wherein
the protective layer is located between the bit line structure and the plurality of word line structures, and the bit line structure is insulated from the plurality of word line structures by the protective layer.