Method for forming semiconductor device

Abstract

A method for forming a semiconductor structure is provided. The method includes: forming a trench in a semiconductor substrate; forming a gate lining layer along a lower portion of the trench; filling a gate electrode layer over the gate lining layer in the lower portion of the trench; forming a first sacrificial layer along a sidewall of an upper portion of the trench; forming a barrier layer along a sidewall of the first sacrificial layer and over a top surface of the gate electrode layer; removing a first portion of the barrier layer along the sidewall of the first sacrificial layer, thereby leaving a second portion of the barrier layer over the top surface of the gate electrode layer; forming a semiconductor layer over the second portion of the barrier layer; removing the first sacrificial layer; and forming a capping layer over the semiconductor layer.

Dependencies are inferred from the claim text.