DRAM transistor including pillars formed using low-temperature ion implant
AssigneeApplied Materials, Inc.
InventorsSipeng Gu, Qintao Zhang
Life of this patent
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Abstract
Disclosed herein are approaches for forming a dynamic random-access memory device (DRAM). In one approach, a method may include forming a plurality of bridge layers in a substrate by directing first ions into the substrate while the substrate is at a low temperature, wherein the ions are directed into the substrate in a series of implants, and annealing the plurality of bridge layers. The method may further include forming a contact by directing second ions into an upper surface of the plurality of bridge layers while the substrate is at the low temperature, and forming a pillar over the contact.
Claims14
A method of forming a device, comprising:
- forming a plurality of bridge layers in a substrate by directing first ions into the substrate while the substrate is at a low temperature, wherein the first ions are directed into the substrate in a series of implants;
- annealing the plurality of bridge layers;
- forming a shallow trench isolation layer directly atop the plurality of bridge layers;
- patterning an opening through the shallow trench isolation layer to expose an upper surface of the plurality of bridge layers;
- forming a contact by directing second ions through the shallow trench isolation layer and into the upper surface of the plurality of bridge layers while the substrate is at the low temperature;
- and
- epitaxially forming a pillar directly over the contact.
A method of forming a dynamic random-access memory device, comprising:
- forming a plurality of bridge layers in a substrate by directing first ions into the substrate while the substrate is at a low temperature, wherein the first ions are directed into the substrate in a series of implants each performed at a different implant energy;
- annealing the plurality of bridge layers;
- forming a shallow trench isolation layer directly atop the plurality of bridge layers;
- patterning an opening through the shallow trench isolation layer to expose an upper surface of the plurality of bridge layers;
- forming a contact by directing second ions through the shallow trench isolation layer and into the upper surface of the plurality of bridge layers while the substrate is at the low temperature;
- and
- epitaxially forming a pillar directly over the contact.
A method of forming a device, comprising:
- forming a plurality of bridge layers in a substrate by directing first ions into the substrate while the substrate is at a low temperature, wherein the first ions are directed into the substrate in a series of implants;
- annealing the plurality of bridge layers;
- patterning an opening through a shallow trench isolation layer to expose an upper surface of the plurality of bridge layers;
- forming a contact by directing second ions through the shallow trench isolation layer and into the upper surface of the plurality of bridge layers while the substrate is at the low temperature;
- and
- forming a pillar over the contact, wherein no annealing process is performed between formation of the contact and formation of the pillar.
Dependencies are inferred from the claim text.