Back to results
US 12,764,484 B2Granted
Semiconductor devices having a membrane layer with smooth stress-relieving corrugations and methods of fabrication thereof
AssigneeInfineon Technologies AG
InventorsAlfons Dehe, Stefan Barzen, Wolfgang Friza, Wolfgang Klein
Life of this patent
Estimating the term…
Abstract
In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer are removed.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- applying a structured masking layer to a substrate;
- forming a plurality of features in the substrate using the structured masking layer, wherein the plurality of features comprises a plurality of trenches formed by isotropic etching;
- removing the structured masking layer;
- after removing the structured masking layer, forming a spring supported membrane layer over the substrate comprising the plurality of features;
- and
- removing a portion of the substrate under the membrane layer.
3 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a membrane layer comprising a plurality of corrugations over a substrate, each corrugation of the plurality of corrugations having a sidewall, a top surface, and a bottom surface, wherein a radius of curvature of an edge connecting the sidewall and the bottom surface is greater than a thickness of the membrane layer, and wherein a radius of curvature of an edge connecting the sidewall and the top surface is greater than the thickness of the membrane layer;
- and
- forming a cavity in the substrate under the membrane layer, wherein the membrane layer comprises a spring supported membrane.
Dependencies are inferred from the claim text.