Patterning in devices with organic light-emitting diode displays and sensors

An electronic device, comprising:

• a sensor;
• a display that overlaps the sensor and emits first light in a direction, wherein the sensor is configured to sense second light that passes through the display and wherein the display comprises:
• a plurality of light-emitting diodes formed by a plurality of anodes, emissive material that overlaps the plurality of anodes, and a cathode layer that overlaps the emissive material;
• a first encapsulation layer formed over the cathode layer, wherein the first encapsulation layer has a first opening that overlaps at least a portion of the sensor in the direction and wherein the cathode layer has a second opening that overlaps the first opening in the direction;
• a second encapsulation layer formed over the first encapsulation layer and overlapping the first and second openings in the direction;
• and
• thin-film transistor layers, wherein the plurality of light-emitting diodes is formed over the thin-film transistor layers and wherein the thin-film transistor layers overlap the first or second opening in the direction.

A method of forming a display that includes a thin-film transistor layer and a plurality of light-emitting diodes formed by a plurality of anodes, emissive material that overlaps the plurality of anodes, and a cathode layer that overlaps the emissive material, wherein the plurality of light-emitting diodes is formed on the thin-film transistor layer, the method comprising:

• forming a first encapsulation layer over the cathode layer, wherein the first encapsulation layer is a blanket layer;
• patterning an opaque masking layer over the first encapsulation layer, wherein the opaque masking layer has at least one opening;
• and
• etching the cathode layer in a region that is overlapped by the at least one opening, wherein at least a portion of the opaque masking layer remains after etching the cathode layer and serves as a second encapsulation layer for the display and wherein the thin-film transistor layer covers the at least one opening.