Driving circuit for power switch device and method thereof
AssigneeFast Sic Semiconductor Incorporated
InventorsFu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung
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Abstract
A switching device controlled by a driver is described. The driver provides a gate-source voltage and a source voltage to a power semiconductor device of the switching device. The source voltage increases with an increment of the gate-source voltage, or the source voltage decreases with a decrement of the gate-source voltage, such that the gate-source voltage exceeds a positive or negative predetermined threshold as early as possible, thereby enhancing switch speed of the power semiconductor device.
Claims9
A method for controlling a switching device, comprising the following steps:
- providing a power semiconductor device which is controlled by a driver, wherein a gate-source voltage and a source voltage are provided to the power semiconductor device;
- outputting a gate-driving signal by the driver to a gate of the power semiconductor device, wherein when the gate-source voltage starts to increases due to first switching of the gate-driving signal, increasing the source voltage such that the gate-source voltage exceeds a positive predetermined threshold set by the driver, and when the gate-source voltage starts to decreases due to second switching of the gate-driving signal, decreasing the source voltage such that the gate-source voltage exceeds a negative predetermined threshold set by the driver, wherein the gate-driving signal is increased and decreased by the first switching and the second switching, respectively;
- and
- the source voltage is further adjusted after the gate-source voltage exceeds the positive predetermined threshold or the negative predetermined threshold, when a variation of the gate-source voltage satisfies a criterion.
A switching device, which is controlled by a driver, a gate-source voltage and a source voltage are provided to a power semiconductor device of the switching device and a gate-driving signal is outputted to a gate of the power semiconductor device, wherein the source voltage increases with an increase of the gate-source voltage, or the source voltage decreases with a decrease of the gate-source voltage, such that the gate-source voltage exceeds a positive or negative predetermined threshold set by the driver, wherein the increase of the gate-source voltage or the decrease of the gate-source voltage is triggered by first switching and second switching of the gate-driving signal, respectively, and the gate-driving signal is increased and decreased by the first switching and the second switching, respectively, and wherein when a slew direction of the gate-source voltage is changed from positive to negative, the source voltage starts to be decreased, and when the slew direction of the gate-source voltage is changed from negative to positive, the source voltage starts to be increased.
Dependencies are inferred from the claim text.