Multiple-stage multiple-path power amplifier with in-package amplifier dies and external inter-stage power splitter
AssigneeNXP USA, Inc.
InventorsLu Wang, Xin Fu, Lu Li
Life of this patent
Estimating the term…
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AssigneeNXP USA, Inc.
InventorsLu Wang, Xin Fu, Lu Li
Estimating the term…
A packaged semiconductor device includes a substrate, an interface for signal communication with an external power splitter, and a first and second stages of a multiple-stage amplifier. The interface includes first, second, and third leads coupled to the substrate. The first amplifier stage includes a first amplifier die with a first input, a first output, and a first power transistor that functions as a driver amplifier. The second amplifier stage includes first and second amplifier paths. The first amplifier path has a second amplifier die with a second input, a second output, and a second transistor that functions as a first final stage amplifier. The second amplifier path has a third amplifier die with a third input, a third output, and a third transistor that functions as a second final stage amplifier. The first output, second input, and third input are coupled to the first, second, and third leads, respectively.
A packaged semiconductor device comprising:
A multiple-stage multiple-path power amplifier comprising:
Dependencies are inferred from the claim text.