Circuits and devices related to radio-frequency amplifiers
AssigneeSkyworks Solutions, Inc.
InventorPhilip John Lehtola
Life of this patent
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Abstract
Circuits and devices related to radio-frequency amplifiers. In some embodiments, a radio-frequency amplifier can include a plurality of narrow band power amplifiers. Each narrow band power amplifier can be configured to operate with a high voltage in an average power tracking mode and be capable of being coupled to an output filter associated with a respective individual frequency band. Each narrow band power amplifier can be sized smaller than a wide band power amplifier configured to operate with more than one of the frequency bands associated with the plurality of narrow band power amplifiers.
Claims20
A radio-frequency amplifier comprising a plurality of power amplifier transistors, each power amplifier transistor configured to operate with a high voltage in an average power tracking mode for a respective frequency band, each power amplifier transistor sized smaller than a wide band power amplifier transistor configured to operate with more than one of the frequency bands associated with the plurality of power amplifier transistors, each power amplifier transistor providing a lower loss than a power amplifier transistor operating with a low voltage and providing a similar frequency band handling capability.
A semiconductor die comprising:
- a substrate;
- and
- a radio-frequency amplifier implemented on the substrate and including a plurality of power amplifier transistors, each power amplifier transistor configured to operate with a high voltage in an average power tracking mode for a respective frequency band, each power amplifier transistor sized smaller than a wide band power amplifier transistor configured to operate with more than one of the frequency bands associated with the plurality of power amplifier transistors, each power amplifier transistor providing a lower loss than a power amplifier transistor operating with a low voltage and providing a similar frequency band handling capability.
A method for fabricating a semiconductor die, the method comprising:
- forming or providing a substrate;
- and
- implementing a radio-frequency amplifier on the substrate such that the radio-frequency amplifier includes a plurality of power amplifier transistors, with each power amplifier transistor being configured to operate with a high voltage in an average power tracking mode for a respective frequency band, and such that each power amplifier transistor is sized smaller than a wide band power amplifier transistor configured to operate with more than one of the frequency bands associated with the plurality of power amplifier transistors, and such that each power amplifier transistor provides a lower loss than a power amplifier transistor operating with a low voltage and providing a similar frequency band handling capability.
Dependencies are inferred from the claim text.