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US 12,763,680 B2Granted
Voltage domain based error management
AssigneeMicron Technology, Inc.
InventorsLeon Zlotnik, Leonid Minz
Life of this patent
Estimating the term…
Abstract
A method includes supplying, via a first voltage regulator, a first supply voltage to a first voltage domain including circuitry configured to operate at the first supply voltage, supplying, via a second voltage regulator, a second supply voltage to a second voltage domain including circuitry configured to operate in a voltage zone, detecting a change in an error characteristic of data associated with the second voltage domain, and altering the second supply voltage to an altered supply voltage based on the change in the error characteristic.
Claims18
A method comprising:
- supplying, via a first voltage regulator, a first supply voltage to control path circuitry of a first voltage domain of a memory system, the first voltage domain configured to operate at the first supply voltage, wherein the control path circuitry is associated with a memory device of the memory system and the control path circuitry is configured to manage a data path associated with the memory device, wherein the data path is of a second voltage domain of the memory system;
- supplying, via a second voltage regulator, a second supply voltage to data path circuitry of the second voltage domain configured to operate in a voltage zone, wherein the data path circuitry forms the data path and the data path is associated with the memory device;
- detecting a change in an error characteristic of data associated with the second voltage domain;
- and
- altering the second supply voltage to an altered supply voltage based on the change in the error characteristic, wherein the second supply voltage and the altered supply voltage are different voltages included in the voltage zone.
2 more elements
An apparatus, comprising:
- a memory device of a memory system;
- a controller of the memory system coupled to the memory device, the memory device having a control path and data path associated therewith, wherein the control path is configured to manage the data path;
- a first voltage regulator configured to provide a first supply voltage to control path circuitry of the control path associated with the memory device, the control path circuitry corresponding to a first voltage domain of the memory system;
- a second voltage regulator configured to provide a second supply voltage to data path circuitry of the data path associated with the memory device, the data path circuitry corresponding to a second voltage domain of the memory system that is different than the first voltage domain, and wherein the data path circuitry is configured to operate in a voltage zone;
- and
- wherein the controller is configured to:
- responsive to a change in an error characteristic of data associated with the data path, cause the second voltage regulator to supply an altered supply voltage to the data path circuitry, wherein a value of the altered supply voltage is negatively correlated to the change in the error characteristic of the data.
4 more elements
A system, comprising:
- a first voltage regulator;
- a second voltage regulator;
- control path circuitry of a first voltage domain of a memory device configured to operate at a first supply voltage, wherein the control path circuitry is associated with the memory device and the control path circuitry is configured to manage a data path of a second voltage domain of the memory device;
- data path circuitry of the second voltage domain forming the data path and configured to operate in a voltage zone defined by an upper voltage and a lower voltage, wherein the data path is associated with the memory device;
- and
- a controller configured to:
- cause the first voltage regulator to supply the first supply voltage to the first voltage domain;
- cause the second voltage regulator to supply a second supply voltage that is less than the first supply voltage and is included in the voltage zone to the second voltage domain;
- and
- receive signaling indicative of a quantity of errors in data associated with the second voltage domain;
- determine, based on the signaling indicative of the quantity of errors, a bit error rate (BER) of the data;
- and
- based on the BER, cause the second voltage regulator to alter the second supply voltage to an altered supply voltage that is supplied to the second voltage domain.
10 more elements
Dependencies are inferred from the claim text.