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US 12,763,551 B2Granted
VCSEL chip, VCSEL array, and method of manufacturing the VCSEL array
AssigneeKorea Photonics Technology Institute
InventorsKeon Hwa Lee, Young Ho Song
Life of this patent
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Abstract
A vertical cavity surface emitting laser (VCSEL) chip, a VCSEL array, and a method of manufacturing the VCSEL array are disclosed. The VCSEL array includes a substrate, an adhesive layer coated on the substrate, a VCSEL chip disposed on the adhesive layer and fixed to the adhesive layer and configured to oscillate light or a laser by being supplied with power, a polymer coated on the VCSEL chip and the adhesive layer, and an interconnector electrically connected to the VCSEL chip.
Claims10
A vertical cavity surface emitting laser (VCSEL) array, comprising:
- a substrate;
- an adhesive layer coated on the substrate;
- a VCSEL chip disposed on the adhesive layer and fixed to the adhesive layer and configured to oscillate light or a laser by being supplied with power;
- a polymer coated on the VCSEL chip and the adhesive layer;
- an interconnector electrically connected to the VCSEL chip,
- wherein the VCSEL chip comprises:
- a first reflection part comprising a plurality of distributed Bragg reflector (DBR) pairs;
- a second reflection part comprising a plurality of DBR pairs;
- a cavity layer that is disposed between the first reflection part and the second reflection part and in which holes that are generated from any one of the first reflection part and the second reflection part and electrons that are generated from the other of the first reflection part and the second reflection part are recombined;
- an oxide layer disposed between the cavity layer and the first reflection part or the second reflection part and configured to determine characteristics of a laser to be output and a diameter of an opening;
- a contact layer formed within one DBR pair of the second reflection part;
- a first metal layer configured to come into contact with the first reflection part so that power is supplied to the first reflection part;
- a second metal layer configured to come into contact with the contact layer so that power is supplied to the second reflection part;
- an etch-stop layer disposed under the second reflection part and configured to prevent damage to the second reflection part in an etch process;
- and
- a passivation layer configured to protect the first reflection part, the second reflection part, the cavity layer, the oxide layer, the contact layer, and the etch-stop layer against an outside, and
- wherein the etch-stop layer has a mesa structure.
14 more elements
Dependencies are inferred from the claim text.