# US 12,763,547 B2 · Light emitting device, method of manufacturing a light emitting device, and method of manufacturing a submount > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,763,547 B2 - Document ID: US12763547B2 - Status: Granted - Kind: B2 - Application number: 18/060,859 - Filed: 2022-12-01 - Published: 2023-06-15 - Granted: 2026-10-13 - Earliest claimed: 2021-12-14 - Assignees: Nichia Corporation - Applicants: Nichia Corporation - Inventors: Kazuma Kozuru - Web page: https://patentgrep.com/patent/US12763547B2 ## CPC - H01S 5/02315: Support members, e.g. bases or carriers - H01S 5/02218: Material of the housings; Filling of the housings - H01S 5/02469: {Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC} - H01S 5/02476: {Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements} - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL ## Abstract A light emitting device includes a submount, a semiconductor laser device, and a base supporting the submount. The submount includes a graphite layer having upper and lower surfaces extending in first and second directions orthogonal to each other and a support layer having upper and lower surfaces extending in the first and second directions. The graphite layer includes a plurality of graphene structures layered in the first direction. Each of the plurality of graphene structures extends in the second direction. The support layer is thicker than the graphite layer. The upper surface of the support layer supports the lower surface of the graphite layer. The semiconductor laser device emits laser light through an end surface in the first direction. The semiconductor laser device includes a waveguide that extends in the first direction and is supported by the upper surface of the graphite layer. ## Claims ### Claim 1 A light emitting device comprising: a submount including: a graphite layer having an upper surface and a lower surface that extend along a first direction and a second direction which are orthogonal to each other, wherein the graphite layer includes a plurality of graphene structures that are layered in the first direction, each of the plurality of graphene structures extending in the second direction, and a support layer having an upper surface and a lower surface that extend in the first direction and the second direction, the support layer being thicker than the graphite layer, the upper surface of the support layer supporting the lower surface of the graphite layer; a semiconductor laser device configured to emit laser light through an end surface in the first direction, the semiconductor laser device including a waveguide that extends in the first direction and is supported by the upper surface of the graphite layer; and a base supporting the submount, wherein the graphite layer is provided on the entire upper surface of the support layer, the graphite layer includes a main portion having an upper surface and a lower surface and a flange portion around the main portion and having an upper surface and a lower surface, the upper surface of the main portion supports the semiconductor laser device, the lower surface of the main portion and the lower surface of the flange portion are flush with each other, and relative to the upper surface of the support layer, the upper surface of the flange portion is at a lower position than is the upper surface of the main portion. ### Claim 2 (depends on 1) The light emitting device of claim 1, wherein the graphite layer has a thickness not less than 10 μm and not more than 200 μm, and the support layer has a thickness not less than 50 μm and not more than 300 μm. ### Claim 3 (depends on 1) The light emitting device of claim 1, wherein the support layer is made of ceramic or metal. ### Claim 4 (depends on 3) The light emitting device of claim 3, wherein the support layer has a thermal conductivity of 100 W/m·K or more. ### Claim 5 (depends on 3) The light emitting device of claim 3, wherein the support layer is electrically insulative. ### Claim 6 (depends on 1) The light emitting device of claim 1, wherein the support layer includes a peripheral portion that is located outside of a perimeter of the graphite layer. ### Claim 7 (depends on 1) The light emitting device of claim 1, wherein side surfaces of the flange portion in the first direction are flush with side surfaces of the support layer in the first direction, respectively, and side surfaces of the flange portion in the second direction are flush with side surfaces of the support layer in the second direction, respectively. ### Claim 8 (depends on 1) The light emitting device of claim 1, wherein a thickness of the flange portion is not less than 0.1 times a thickness of the main portion and not more than 0.6 times the thickness of the main portion. ### Claim 9 (depends on 1) The light emitting device of claim 1, wherein the submount includes a first metal film provided on the upper surface of the graphite layer. ### Claim 10 (depends on 9) The light emitting device of claim 9, wherein the first metal film is provided on side surfaces of the graphite layer in the first direction and on side surfaces of the graphite layer in the second direction. ### Claim 11 (depends on 9) The light emitting device of claim 9, wherein the submount includes a second metal film provided in a partial area on the first metal film. ### Claim 12 (depends on 1) The light emitting device of claim 1, wherein the semiconductor laser device has a semiconductor multilayer structure including a substrate, a first cladding layer, an emission layer, and a second cladding layer that are layered in this order, and in the semiconductor multilayer structure, the emission layer is located closer to the graphite layer than is the substrate.