Plasma processing apparatus

A plasma processing apparatus comprising:

• a plasma processing chamber;
• a substrate support disposed in the plasma processing chamber, the substrate support including:
• a base;
• a ceramic member disposed on the base, and having a substrate support surface and a ring support surface, the ceramic member having a plurality of first vertical holes and a plurality of second vertical holes, each first vertical hole vertically extending downward from the substrate support surface, each second vertical hole vertically extending downward from the ring support surface;
• at least one annular member disposed on the ring support surface so as to surround a substrate on the substrate support surface;
• an electrostatic electrode layer embedded into the ceramic member and disposed below the substrate support surface;
• first and second central bias electrode layers embedded into the ceramic member and disposed below the electrostatic electrode layer, the second central bias electrode layer being disposed below the first central bias electrode layer;
• a plurality of first vertical connectors embedded into the ceramic member, and vertically extending in a vicinity of the first vertical hole so as to surround the first vertical hole in a plan view, each first vertical connector electrically connecting the first central bias electrode layer and the second central bias electrode layer;
• first and second annular bias electrode layers embedded into the ceramic member, and disposed below the ring support surface, the first annular bias electrode layer being electrically connected to the second central bias electrode layer, the second annular bias electrode layer being disposed below the first annular bias electrode layer;
• and
• a plurality of second vertical connectors embedded into the ceramic member, and vertically extending in a vicinity of the second vertical hole so as to surround the second vertical hole in a plan view, each second vertical connector electrically connecting the first annular bias electrode layer and the second annular bias electrode layer, and
• a bias generator electrically connected to the second annular bias electrode layer and configured to generate a bias signal.