Miniature hybrid electron beam column
AssigneeKLA Corporation
InventorsLawrence Muray, John Gerling, James Spallas, Alan Brodie
Life of this patent
Estimating the term…
Abstract
A miniature electron beam column in combination with magnetostatic lenses to produce very high-performance miniature electron or ion beam columns. Silicon-based electron optical components provide high-accuracy formation and alignment of critical optical elements and the magnetic lenses provide low-aberration focusing or condensing elements. Accurate assembly of the silicon and magnetic components is achievable via the multilayered assembly techniques and allows for achieving high performance.
Claims18
A device comprising:
- a detector in line with an electron source;
- a lens stack of silicon micro-electromechanical lenses between the detector and the electron source, wherein the lens stack comprises lithographically placed fiducials configured to align adjacent silicon micro-electromechanical lenses in the lens stack;
- a magnetostatic objective lens in line with the detector, the magnetostatic objective lens including an aperture, wherein the magnetostatic objective lens is configured to focus an electron beam from the electron source as it passes through the aperture, wherein the magnetostatic objective lens comprises a permanent magnet lens lithographically placed to align with the silicon micro-electromechanical lenses of the lens stack;
- and
- a post-lens element between the magnetostatic objective lens and a sample being imaged during operation, wherein the post-lens element is configured to dynamically focus the electron beam onto the sample to control backscattered electrons and/or secondary electrons from the sample and received at the detector.
A system comprising:
- an electron source;
- a detector in line with the electron source;
- a lens stack of silicon micro-electromechanical lenses between the detector and the electron source, wherein the lens stack comprises lithographically placed fiducials configured to align adjacent silicon micro-electromechanical lenses in the lens stack;
- a magnetostatic objective lens in line with the electron source and the detector, the magnetostatic objective lens including an aperture, wherein the magnetostatic objective lens is configured to focus an electron beam from the electron source as it passes through the aperture, wherein the magnetostatic objective lens comprises a permanent magnet lens lithographically placed to align with the silicon micro-electromechanical lenses of the lens stack;
- a post-lens element between the magnetostatic objective lens and a sample being imaged during operation, wherein the post-lens element is configured to dynamically focus the electron beam onto the sample to control backscattered electrons and/or secondary electrons from the sample and received at the detector;
- and
- a stage upon which the sample being imaged is disposed during operation, the stage configured to translate/rotate relative to the electron source, the detector, the magnetostatic objective lens, and the post-lens element.
A miniature electron beam column comprising:
- an electron source;
- a detector in line with the electron source;
- a lens stack of silicon micro-electromechanical lenses between the detector and the electron source, wherein the lens stack comprises lithographically placed fiducials configured to align adjacent silicon micro-electromechanical lenses in the lens stack;
- a magnetostatic objective lens in line with the electron source and the detector, the magnetostatic objective lens including an aperture, wherein the magnetostatic objective lens is configured to focus an electron beam from the electron source as it passes through the aperture, wherein the magnetostatic objective lens comprises a permanent magnet lens lithographically placed to align with the silicon micro-electromechanical lenses of the lens stack;
- and
- a post-lens element between the magnetostatic objective lens and a sample being imaged during operation, wherein the post-lens element is configured to dynamically focus the electron beam onto the sample to control backscattered electrons and/or secondary electrons from the sample and received at the detector.
Dependencies are inferred from the claim text.