# US 12,763,262 B2 · Thin-film substrate and energy-sensitive electronic component including same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,763,262 B2 - Document ID: US12763262B2 - Status: Granted - Kind: B2 - Application number: 18/282,962 - Filed: 2023-07-21 - Published: 2024-07-11 - Granted: 2026-10-13 - Earliest claimed: 2022-08-30 - Assignees: Vanam Inc. - Applicants: Vanam Inc. - Inventors: Soo Deok Han - Web page: https://patentgrep.com/patent/US12763262B2 ## CPC - H01G 4/33: Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} - H01G 4/008: Selection of materials - H01G 4/012: Form of non-self-supporting electrodes - H01G 4/1218: {based on titanium oxides or titanates (H01G4/1245 takes precedence)} - H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10) ## Abstract A thin-film substrate includes an Al2O3 single crystal base substrate, and a VO2 functional thin film disposed on the base substrate and doped with Ti, wherein, when R1 is a resistance at a temperature of 25° C. and R2 is a resistance at a temperature of 80° C., the functional thin film has an R1/R2 of 104 or more, and when a heating process from 25° C. to 80° C. and a cooling process from 80° C. to 25° C. are referred to as one cycle, a variation (VΔT) in hysteresis temperature difference (ΔT) of the functional thin film during 10 cycles may be 1° C. or lower, a variation (VTMI) in phase transition temperature (TMI) of the functional thin film during 10 cycles may be 1.5° C. or lower, and a variation rate (VR1/R2) of R1/R2 of the functional thin film during 10 cycles may be 5% or less. ## Claims ### Claim 1 An energy-sensitive electronic component, comprising: an Al2O3 single crystal base substrate; a VO2 functional thin film disposed on the Al2O3 single crystal base substrate and doped with Ti; and a first outer electrode and a second outer electrode disposed to be spaced apart from each other on the Al2O3 single crystal base substrate and/or the VO2 functional thin film and connected to the VO2 functional thin film, wherein, when R1 is a resistance at a temperature of 25° C. and R2 is a resistance at a temperature of 80° C., the VO2 functional thin film has an R1/R2 of 104 or more, and when a heating process from 25° C. to 80° C. and a cooling process from 80° C. to 25° C. are referred to as one cycle, the VO2 functional thin film satisfies all of a) a variation (VΔT) in hysteresis temperature difference (ΔT) during 10 cycles is 1° C. or lower, b) a variation (VTMI) in phase transition temperature (TMI) during 10 cycles is 1.5° C. or lower, and c) a variation rate (VR1/R2) of R1/R2 during 10 cycles is 5% or less. ### Claim 2 (depends on 1) The energy-sensitive electronic component of claim 1, wherein each of the first outer electrode and the second outer electrode includes a conductive resin layer including a base resin and conductive particles dispersed in the base resin, and wherein the conductive particles include at least one of platinum (Pt), gold (Au), chromium (Cr), molybdenum (Mo), nickel (Ni), titanium (Ti), silver (Ag), aluminum (Al), copper (Cu), iron (Fe), indium (In), tin (Sn), lead (Pb), palladium (Pd), zinc (Zn), and cobalt (Co). ### Claim 3 (depends on 1) The energy-sensitive electronic component of claim 1, further comprising: first and second lead thin films disposed between each of the first outer electrode and the second outer electrode and the VO2 functional thin film to connect the first outer electrode and the second outer electrode to the VO2 functional thin film. ### Claim 4 (depends on 3) The energy-sensitive electronic component of claim 3, wherein each of the first and second lead thin films includes at least one of Pt, Au, Cr, Mo, Ni, Ti, Ag, Al, Cu, Fe, In, Sn, Pb, Pd, Zn, and Co. ### Claim 5 (depends on 3) The energy-sensitive electronic component of claim 3, wherein the VO2 functional thin film has one surface in contact with the Al2O3 single crystal base substrate and another surface facing the one surface, and the first and second lead thin films are disposed to be spaced apart from each other on the another surface of the VO2 functional thin film. ### Claim 6 (depends on 5) The energy-sensitive electronic component of claim 5, wherein at least a portion of the first outer electrode and at least a portion of the second outer electrode are disposed to be spaced apart from each other on the another surface of the VO2 functional thin film so as to be in contact with the first and second lead thin films. ### Claim 7 (depends on 6) The energy-sensitive electronic component of claim 6, wherein the first outer electrode and the second outer electrode extend to both end surfaces, which face each other, of the Al2O3 single crystal base substrate. ### Claim 8 A thin-film substrate, comprising: an Al2O3 single crystal base substrate; and a VO2 functional thin film disposed on the Al2O3 single crystal base substrate and doped with Ti, wherein, when R1 is a resistance at a temperature of 25° C. and R2 is a resistance at a temperature of 80° C., the VO2 functional thin film has an R1/R2 of 104 or more, and when a heating process from 25° C. to 80° C. and a cooling process from 80° C. to 25° C. are referred to as one cycle, the VO2 functional thin film satisfies all of a) a variation (VΔT) in hysteresis temperature difference (ΔT) during 10 cycles is 1° C. or lower, b) a variation (VTMI) in phase transition temperature (TMI) during 10 cycles is 1.5° C. or lower, and c) a variation rate (VR1/R2) of R1/R2 during 10 cycles is 5% or less. ### Claim 9 (depends on 8) The thin-film substrate of claim 8, further comprising: first and second lead thin films disposed to be spaced apart from each other on the VO2 functional thin film and connected to the VO2 functional thin film. ### Claim 10 (depends on 9) The thin-film substrate of claim 9, wherein each of the first and second lead thin films includes at least one of platinum (Pt), gold (Au), chromium (Cr), molybdenum (Mo), nickel (Ni), titanium (Ti), silver (Ag), aluminum (Al), copper (Cu), iron (Fe), indium (In), tin (Sn), lead (Pb), palladium (Pd), zinc (Zn), and cobalt (Co).