Variable fast look neighbor ahead to improve read accuracy
AssigneeSanDisk Technologies LLC
InventorsAlbert Chen, Xiang Yang, Jiahui Yuan, Eric Fu
Life of this patent
Estimating the term…
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AssigneeSanDisk Technologies LLC
InventorsAlbert Chen, Xiang Yang, Jiahui Yuan, Eric Fu
Estimating the term…
A memory apparatus includes memory cells connected to word lines and configured to retain a threshold voltage corresponding to data states. A control means is configured to determine ones of the data states for the memory cells of a neighboring word line adjacent to a selected word line in a pre-read. The control means determines an adjusted sense time according to a zone identified for the memory cells of the neighboring word line and the one of the data states targeted for the memory cells of the selected word line and a temperature of the memory apparatus. The control means is also configured to perform reads on the selected word line for each of a plurality of groupings of ones of the data states in a read operation using the adjusted sense time determined for each of the memory cells of the selected word line.
A memory apparatus, comprising:
A controller in communication with a memory apparatus including memory cells each connected to one of a plurality of word lines and configured to retain a threshold voltage corresponding to one of a plurality of data states, the controller configured to:
A method of operating a memory apparatus including memory cells each connected to one of a plurality of word lines and configured to retain a threshold voltage corresponding to one of a plurality of data states, the method comprising:
Dependencies are inferred from the claim text.