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US 12,763,132 B2Granted
Volatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-Heung Kim, Taeyoung Oh
Life of this patent
Estimating the term…
Abstract
A memory device includes a bank connected to a plurality of wordlines and a plurality of column select lines (CSLs). Among the plurality of wordlines, every r-th wordline in a column direction may be allocated for metadata where r is a positive integer.
Claims20
A memory device comprising:
- a first bank connected to a plurality of wordlines and a plurality of column select lines (CSLs),
- wherein
- among the plurality of wordlines, every r-th wordline in a column direction is allocated for metadata, where r is a positive integer.
A memory device comprising:
- a bank connected to a plurality of wordlines and a plurality of column select lines (CSLs);
- a row decoder connected to the plurality of wordlines and extending in a column direction;
- and
- a column decoder connected to the plurality of CSLs and extending in a row direction,
- wherein
- among the plurality of wordlines, every r-th wordline in the column direction is allocated for metadata, where r is a positive integer.
3 more elements
A memory device comprising:
- a subbank divided in a row direction and comprising a plurality of subsets each divided in the row direction;
- a plurality of wordlines extending in the row direction and connected to the subbank, wherein among the plurality of wordlines, every r-th wordline in a column direction is allocated for metadata, where r is a positive integer;
- and
- a plurality of column select line (CSL) subsets extending in the column direction and connected to the subbank.
1 more element
Dependencies are inferred from the claim text.