Back to results
US 12,762,443 B2Granted
Quantum entanglement device
AssigneeTakahiro Matsumoto
InventorsTakahiro Matsumoto, Akio Tokumitsu
Life of this patent
Estimating the term…
Abstract
A quantum entanglement device includes a group-IV semiconductor, and a scissor-type quantum entanglement element that has at least one atom on a surface of the group-IV semiconductor and two hydrogen atoms or two deuterium atoms coupled to terminations of the atom.
Claims17
A quantum entanglement device comprising:
- a group-IV semiconductor;
- and
- a scissor-type quantum entanglement element consisting of at least one atom on a surface of said group-IV semiconductor and two hydrogen atoms or two deuterium atoms coupled to terminations of said atom,
- wherein a surface of said group-IV semiconductor is a (100)-face, and
- wherein a strain is introduced into said group-IV semiconductor to resolve degenerated energy levels of said scissor-type quantum entanglement element.
2 more elements
A quantum entanglement device comprising:
- a group-IV semiconductor;
- and
- a scissor-type quantum entanglement element consisting of at least one atom on a surface of said group-IV semiconductor and two hydrogen atoms or two deuterium atoms coupled to terminations of said atom,
- wherein said scissor-type quantum entanglement element has a triplet excited level between a singlet ground level and a singlet excited level, a difference between said singlet ground level and said triplet excited level being a same as a difference between said triplet excited level and said singlet excited level,
- wherein an entangled photon pair is generated by a cascade transition from said singlet excited level via a spin angular moment m=+1 state of said triplet excited level to said singlet ground level and a cascade transition from said singlet excited level via a spin angular moment m=−1 state of said triplet excited level to said singlet ground level, and
- wherein a phonon pair further propagate in opposite directions to each other by cascade transitions of said singlet excited level via a spin angular momentum m=0 state of said triplet excited level to said singlet ground level.
3 more elements
A quantum entanglement device comprising:
- a group-IV semiconductor;
- and
- a scissor-type quantum entanglement element consisting of at least one atom on a surface of said group-IV semiconductor and two hydrogen atoms or two deuterium atoms coupled to terminations of said atom,
- wherein said scissor-type quantum entanglement element has a triplet excited level between a singlet ground level and a singlet excited level, a difference between said singlet ground level and said triplet excited level being different from a difference between said triplet excited level and said singlet excited level by introducing a strain into said group-IV semiconductor,
- wherein an entangled photon pair is generated by a cascade transition from said singlet excited level via a spin angular moment m=+1 state of said triplet excited level to said singlet ground level and a cascade transition from said singlet excited level via a spin angular moment m=−1 state of said triplet excited level to said singlet ground level, and
- wherein a phonon pair further propagate in opposite directions to each other by cascade transitions of said singlet excited level via a spin angular momentum m=0 state of said triplet excited level to said singlet ground level.
3 more elements
A quantum entangled photon pair laser device comprising:
- a group-IV semiconductor;
- multiple scissor-type quantum entanglement elements consisting of multiple atoms on a surface of said group-IV semiconductor and two hydrogen atoms or two deuterium atoms coupled to terminations of each of said atoms;
- and
- a pump light source for exciting said multiple scissor-type entanglement elements entirely,
- wherein said multiple scissor-type quantum entanglement elements are arranged in close proximity to each other, so that a photon pair is stimulatively emitted,
- wherein a surface of said group-IV semiconductor is a (100)-face, and
- wherein a strain is introduced into said group-IV semiconductor to resolve degenerated energy levels of said scissor-type quantum entanglement element.
4 more elements
A quantum computer comprising:
- a group-IV semiconductor;
- and
- multiple scissor-type quantum entanglement elements consisting of multiple atoms on a surface of said group-IV semiconductor and two hydrogen atoms or two deuterium atoms coupled to terminations of each of said atoms, so that a unitary operation is carried out among said multiple scissor-type quantum entanglement elements,
- wherein a surface of said group-IV semiconductor is a (100)-face, and
- wherein a strain is introduced into said group-IV semiconductor to resolve degenerated energy levels of said scissor-type quantum entanglement element.
2 more elements
A quantum communication device comprising:
- a group-IV semiconductor;
- and
- multiple scissor-type quantum entanglement elements consisting of multiple atoms on a surface of said group-IV semiconductor and two hydrogen atoms or two deuterium atoms coupled to terminations of each of said atoms, so that a Bell measurement is carried out among said multiple scissor-type quantum entanglement elements, causing a quantum teleportation or a quantum entangled swapping,
- wherein a surface of said group-IV semiconductor is a (100)-face, and
- wherein a strain is introduced into said group-IV semiconductor to resolve degenerated energy levels of said scissor-type quantum entanglement element.
2 more elements
A quantum cryptography device comprising:
- a group-IV semiconductor;
- and
- multiple scissor-type quantum entanglement elements consisting of multiple atoms on a surface of said group-IV semiconductor and two hydrogen atoms or two deuterium atoms coupled to terminations of each of said atoms, so that a Bell measurement is carried out among said multiple scissor-type quantum entanglement elements, causing a quantum teleportation or a quantum entangled swapping,
- wherein a surface of said group-IV semiconductor is a (100)-face, and
- wherein a strain is introduced into said group-IV semiconductor to resolve degenerated energy levels of said scissor-type quantum entanglement element.
2 more elements
Dependencies are inferred from the claim text.