Back to results
US 12,761,829 B2Granted
Adjusting read threshold voltage using CoV offset
AssigneeMicron Technology, Inc.
InventorsYew Shen Teo, Wai Leong Chin, Jiejuan Liu
Life of this patent
Estimating the term…
Abstract
This disclosure is directed to a memory device that intelligently applies an additional read offset when reading memory blocks. The memory device receives a request to read a portion from a memory device and computes a read threshold voltage for reading data from the portion of the memory device. The memory device determines whether the portion is associated with a pseudo-folding event and, in response to determining whether the portion is associated with the pseudo folding event, selectively applies an additional read offset to the read threshold voltage to read the data from the portion of the memory device.
Claims20
A system comprising:
- a memory device;
- and
- a processing device, operatively coupled to the memory device, programmed to perform operations comprising:
- determining that a portion of the memory device satisfies multiple criteria including the portion being associated with a bit error rate (BER) that transgresses a threshold value and having a width of a valley associated with the portion that transgresses a valley width threshold;
- computing a center of valley (CoV) read offset associated with the portion based on the width of the valley;
- based on determining that the portion of the memory device satisfies the multiple criteria, adding the portion to a list of portions associated with pseudo-folding events and storing a CoV read offset in association with the portion in the list;
- after adding determining that the portion of the memory device satisfies the multiple criteria, receiving a request to read the portion from the memory device;
- computing a read threshold voltage for reading data from the portion of the memory device;
- determining that the portion is associated with a pseudo-folding event based on determining that the portion is include in the list of portions;
- and
- based on determining that the portion is associated with the pseudo-folding event, applying an additional read offset comprising the stored CoV read offset that was computed based on the width of the valley to the read threshold voltage to read the data from the portion of the memory device.
8 more elements
At least one non-transitory machine-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- determining that a portion of a memory device satisfies multiple criteria including the portion being associated with a bit error rate (BER) that transgresses a threshold value and having a width of a valley associated with the portion that transgresses a valley width threshold;
- computing a center of valley (CoV) read offset associated with the portion based on the width of the valley;
- based on determining that the portion of the memory device satisfies the multiple criteria, adding the portion to a list of portions associated with pseudo-folding events and storing a CoV read offset in association with the portion in the list;
- after adding determining that the portion of the memory device satisfies the multiple criteria, receiving a request to read the portion from the memory device;
- computing a read threshold voltage for reading data from the portion of the memory device;
- determining that the portion is associated with a pseudo-folding event based on determining that the portion is include in the list of portions;
- and
- based on determining that the portion is associated with the pseudo-folding event, applying an additional read offset comprising the stored CoV read offset that was computed based on the width of the valley to the read threshold voltage to read the data from the portion of the memory device.
5 more elements
A method comprising:
- determining that a portion of a memory device satisfies multiple criteria including the portion being associated with a bit error rate (BER) that transgresses a threshold value and having a width of a valley associated with the portion that transgresses a valley width threshold;
- computing a center of valley (CoV) read offset associated with the portion based on the width of the valley;
- based on determining that the portion of the memory device satisfies the multiple criteria, adding the portion to a list of portions associated with pseudo-folding events and storing a CoV read offset in association with the portion in the list;
- after adding determining that the portion of the memory device satisfies the multiple criteria, receiving a request to read the portion from the memory device;
- computing a read threshold voltage for reading data from the portion of the memory device;
- determining that the portion is associated with a pseudo-folding event based on determining that the portion is include in the list of portions;
- and
- based on determining that the portion is associated with the pseudo-folding event, applying an additional read offset comprising the stored CoV read offset that was computed based on the width of the valley to the read threshold voltage to read the data from the portion of the memory device.
5 more elements
Dependencies are inferred from the claim text.