Dynamic adjustment of threshold voltage offsets for wordline groups

A method comprising:

• receiving, by a processing device, a request to perform a read operation on a set of memory cells of a memory device;
• identifying, using a mapping data structure, a wordline group coupled to the set of memory cells of the memory device, wherein the wordline group is formed based on physical locations of a plurality of wordlines in the wordline group, and wherein the mapping data structure comprises a plurality of records, each record of the plurality of record mapping an identifier of a set of memory cells to a corresponding wordline group;
• identifying a threshold voltage offset bin associated with the set of memory cells;
• determine a current temperature associated with the set of memory cells;
• determining, based on the threshold voltage offset bin, the current temperature, and the wordline group, a set of threshold voltage offsets associated with the set of memory cells;
• and
• performing the read operation using the set of threshold voltage offsets.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

• receiving a request to perform a read operation on a set of memory cells of a memory device;
• identifying, using a mapping data structure, a wordline group coupled to the set of memory cells of the memory device, wherein the wordline group is formed based on physical locations of a plurality of wordlines in the wordline group, and wherein the mapping data structure comprises a plurality of records, each record of the plurality of record mapping an identifier of a set of memory cells to a corresponding wordline group;
• identifying a threshold voltage offset bin associated with the set of memory cells;
• determining a current temperature associated with the set of memory cells;
• determining, based on the threshold voltage offset bin and the current temperature, a read mask identifier associated with the set of memory cells;
• determining, based on the read mask identifier and the wordline group, a set of threshold voltage offsets associated with the set of memory cells;
• and
• performing the read operation using the set of threshold voltage offsets.