Volatile memory device included in memory system and method for extending life expectancy thereof

A method for extending life expectancy of a volatile memory device, the method comprising:

• executing, by control logic that is coupled to memory cells included in the volatile memory device, operations comprising:
• for a first read or write operation, receiving, from a memory controller, a first supply voltage associated with a normal life state;
• performing a life test for the memory cells included in the volatile memory device;
• determining whether the memory cells have the normal life state or a shrink-life state indicating a life expectancy is predicted to be reduced relative to the normal life state based on a result of the life test;
• and
• responsive to determining that the memory cells have the shrink-life state, for a second read or write operation, receiving, from the memory controller, a second supply voltage associated with the shrink-life state, the second supply voltage being less than the first supply voltage associated with the normal life state.

A method for extending life expectancy of a volatile memory device, the method comprising:

• executing, by control logic that is coupled to memory cells included in the volatile memory device, operations comprising:
• for a first read or write operation, using a second voltage associated with a normal life state as a wordline voltage applied to a wordline connected to the memory cells;
• verifying whether a state of the volatile memory device satisfies a first condition;
• performing a predicted life test for the memory cells included in the volatile memory device when the state of the volatile memory device satisfies the first condition;
• verifying whether the state of the volatile memory device satisfies in a second condition;
• when the state of the volatile memory device satisfies the second condition, for a second read or write operation, decreasing the wordline voltage applied to the wordline connected to the memory cells to a first voltage associated with the second condition, the first voltage being less than the second voltage associated with the normal life state used for the first read or write operation.