Through-silicon via (TSV) testing
AssigneeTexas Instruments Incorporated
InventorLee D. Whetsel
Life of this patent
Estimating the term…
Abstract
An integrated circuit die includes a substrate of semiconductor material having a top surface, a bottom surface, and an opening through the substrate between the top surface and the bottom surface. A through silicon via (TSV) has a conductive body in the opening, has a top contact point coupled to the body at the top surface, and has a bottom contact point coupled to the body at the bottom surface. A scan cell has a serial input, a serial output, control inputs, a voltage reference input, a response input coupled to one of the contact points, and a stimulus output coupled to the other one of the contact points.
Claims20
A system comprising:
- a first die including a first test circuit;
- and
- a second die including:
- a through-silicon via (TSV) coupled to the first test circuit of the first die;
- a first switch including a first current terminal coupled to the TSV, wherein the first switch includes a second current terminal;
- a second switch coupled to the second current terminal of the first switch;
- and
- a second test circuit coupled to the second current terminal of the first switch.
A system comprising:
- a first die including:
- a first test circuit;
- and
- a through-silicon via (TSV) coupled to the first test circuit;
- and
- a second die including:
- a first switch including a first current terminal coupled to the TSV of the first die,
- wherein the first switch includes a second current terminal;
- a second switch coupled to the second current terminal of the first switch;
- and
- a second test circuit coupled to the second current terminal of the first switch.
A system comprising:
- a first die including:
- a test circuit;
- a first through-silicon via (TSV) coupled to the test circuit;
- and
- a second TSV coupled to the test circuit;
- and
- a second die including:
- a first switch including a first current terminal coupled to the first TSV of the first die, wherein the first switch includes a second current terminal and a first control terminal;
- a second switch coupled to the second current terminal of the first switch;
- a third switch including a third current terminal coupled to the second TSV of the first die, wherein the third switch includes a fourth current terminal and a second control terminal;
- a first flip-flop coupled to the first control terminal of the first switch;
- a second flip-flop coupled to the second control terminal of the second switch;
- a first comparator coupled to the second current terminal of the first switch;
- and
- a second comparator coupled to the fourth current terminal of the third switch.
Dependencies are inferred from the claim text.