# US 12,761,094 B2 · High-temperature thin-film strain sensor

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- Number: US 12,761,094 B2
- Document ID: US12761094B2
- Status: Granted
- Kind: B2
- Application number: 18/782,000
- Filed: 2024-07-23
- Published: 2024-11-28
- Granted: 2026-10-13
- Earliest claimed: 2024-07-23
- Applicants: Xi'an Jiaotong University
- Inventors: Yifan Zhao; Ge Wang; Fengwei Liu; Yaxin Zhang; Chenying Wang; Feng Han; Zhuangde Jiang
- Web page: https://patentgrep.com/patent/US12761094B2

## CPC

- G01L 1/2293: {of the semi-conductor type}
- G01L 1/225: {Measuring circuits therefor}
- G01B 7/18: {using change in resistance}
- G01L 1/2281: {for temperature variations}
- G01L 1/2287: {constructional details of the strain gauges (adjustable resistors H01C10/00)}
- G01L: MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE (weighing G01G)
- G01B: MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS

## Abstract

The present disclosure relates to the field of strain sensors, and specifically relates to a high-temperature thin-film strain sensor, including a substrate and a strain-sensitive grid. The strain-sensitive grid includes an indium tin oxide layer and a platinum layer, the indium tin oxide layer is deposited on the substrate, and the platinum layer is deposited on the indium tin oxide layer. The indium tin oxide layer contains 50% by mass of indium oxide and 50% by mass of tin oxide. The high-temperature thin-film strain sensor provided by the present disclosure can be used in an environment from room temperature to 500° C., and have extremely high sensitivity at a high temperature of 500° C. Unlike the conventional metal foil strain gauge with a thickness of several microns, the high-temperature thin-film strain grid has a thickness of 500 nm, which can better convey the strain of the measured object at high temperature.

## Claims

### Claim 1

A high-temperature thin-film strain sensor, comprising a substrate, wherein a strain-sensitive grid is deposited on the substrate, the strain-sensitive grid is a composite thin film composed of an indium tin oxide layer and a platinum layer, the indium tin oxide layer is deposited on the substrate, and the platinum layer is deposited on the indium tin oxide layer;
in the indium tin oxide layer, a mass fraction of indium oxide is 50%, and a mass fraction of tin oxide is 50%.

### Claim 2 (depends on 1)

The high-temperature thin-film strain sensor according to claim 1, wherein the indium tin oxide layer has a thickness of 450 nm, and the platinum layer has a thickness of 50 nm.

### Claim 3 (depends on 1)

The high-temperature thin-film strain sensor according to claim 1, wherein the strain-sensitive grid comprises a plurality of longitudinal grids, the plurality of longitudinal grids are deposited on the substrate in parallel, transverse grids are respectively connected between two adjacent longitudinal grids, the transverse grids are deposited on the substrate, the longitudinal grids and the transverse grids constitute a continuous S-shaped structure, two ends of the continuous S-shaped structure are respectively connected to ends of two transition grids, and the other ends of the two transition grids are respectively connected to electrodes;
the transverse grids, the longitudinal grids, the transition grids and the electrodes are all composite thin films composed of an indium tin oxide layer and a platinum layer.

### Claim 4 (depends on 3)

The high-temperature thin-film strain sensor according to claim 3, wherein the S-shaped structure has a length of 6.3 mm, a width of 2.4 mm, the longitudinal grids have a width of 0.15 mm, and there is a spacing of 0.3 mm between two adjacent longitudinal grids.

### Claim 5 (depends on 3)

The high-temperature thin-film strain sensor according to claim 3, wherein the electrodes are brushed with conductive silver glue and connected with platinum wires to measure resistance change.

### Claim 6 (depends on 1)

The high-temperature thin-film strain sensor according to claim 1, wherein the indium tin oxide layer and the platinum layer are both deposited by magnetron sputtering.

### Claim 7 (depends on 1)

The high-temperature thin-film strain sensor according to claim 1, wherein the substrate is an aluminum oxide sheet.

### Claim 8 (depends on 1)

The high-temperature thin-film strain sensor according to claim 1, wherein the strain sensor has a sensitivity of GF=45 in a 500° C. environment and a response time τ<0.2 S.

### Claim 9 (depends on 1)

The high-temperature thin-film strain sensor according to claim 1, wherein the substrate is capable of being fixed to a surface of a component to be measured by high-temperature glue.