n-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method

Abstract

Provided is an n-type GaN crystal, which has two main surfaces facing opposite directions from each other. One of the two main surfaces has a Ga polarity and is inclined at an angle of 0° to 10° with respect to the (0001) crystal plane. The n-type GaN crystal yields at least one X-ray anomalous transmission image having a square area of 10 mm×10 mm, preferably 15 mm×15 mm, and more preferably 20 mm×20 mm. In addition, the n-type GaN crystal has a Si concentration of 5×1016 atoms/cm3 or higher, O concentration of 3×1016 atoms/cm3 or lower, and/or a H concentration of 1×1017 atoms/cm3 or lower.

Dependencies are inferred from the claim text.