Wafer temperature gradient control to suppress slip formation in high-temperature epitaxial film growth

A reactor system for providing wafer temperature gradient control, comprising:

• a reaction chamber;
• in the reaction chamber, a susceptor for supporting a wafer;
• a plurality of heat lamps operable to direct heat into the reaction chamber and onto the wafer;
• a temperature monitoring assembly comprising at least three pyrometers directed toward a surface of the wafer upon which a material is to be deposited, wherein the at least three pyrometers are configured to read temperatures in a center zone, a middle zone, and an edge zone of the surface of the wafer, wherein the temperature monitoring assembly comprises:
• an edge pyrometer configured to receive thermal radiation emitted from an edge sensor spot in the edge zone on the surface of the wafer;
• a center pyrometer configured to receive thermal radiation emitted from a center sensor spot in the center zone on the surface of the wafer;
• and
• a middle pyrometer configured to receive thermal radiation emitted from a middle sensor spot in the middle zone on the surface of the wafer,
• wherein the edge sensor spot is smaller than at least one of the center sensor spot or the middle sensor spot;
• and
• a controller configured to control the plurality of heat lamps based on the temperatures of the center, middle, and edge zones to control a temperature gradient from a center to an edge of the wafer.

A reactor system for providing wafer temperature gradient control, comprising:

• a susceptor for supporting a wafer;
• a plurality of heat lamps operable to heat the wafer;
• a temperature monitoring assembly comprising a center pyrometer, a middle pyrometer, and an edge pyrometer for sensing, respectively, a temperature in a center zone of the wafer, a temperature in a middle zone of the wafer, and a temperature in an edge zone of the wafer, wherein the temperature monitoring assembly is configured to sense the temperatures of the center zone, the middle zone, and the edge zone on a surface of the wafer upon which a material is to be deposited,
• wherein the edge pyrometer is configured to receive thermal radiation emitted from an edge sensor spot in the edge zone on the surface of the wafer, wherein the center pyrometer is configured to receive thermal radiation emitted from a center sensor spot in the center zone on the surface of the wafer, and wherein the middle pyrometer is configured to receive thermal radiation emitted from a middle sensor spot in the middle zone on the surface of the wafer,
• wherein the edge sensor spot is smaller than at least one of the center sensor spot or the middle sensor spot;
• and
• a controller operating the plurality of heat lamps based on the temperatures of the center, middle, and edge zones to control a temperature gradient from a center to an edge of the wafer, wherein during the operating, the controller generates control signals to independently operate a first set of the heat lamps to heat the center zone of the wafer, a second set of the heat lamps to heat the middle zone of the wafer, and a third set of the heat lamps to heat the edge zone of the wafer.