Method and apparatus for growing silicon single crystal ingots

A method of growing a silicon single crystal ingot, comprising:

• charging polysilicon in a crucible within a chamber;
• melting the polysilicon in the crucible, thereby forming a silicon melt;
• measuring temperatures at different portions of a surface of the silicon melt and determining whether a predetermined portion of the polysilicon has been melted;
• and
• increasing a supply amount of an inert gas supplied to the chamber while decreasing an internal pressure of the chamber, when the predetermined portion of the polysilicon has been melted,
• wherein measurement of a melting degree of the polysilicon is determined based on a ratio between a low-temperature part and a high-temperature part of the surface of the silicon melt in the crucible obtained through measurement of the surface of the silicon melt,
• wherein a temperature of the low-temperature part is 800 to 900° C., and a temperature of the high-temperature part is 1,000° C. or more, and
• wherein the internal pressure of the chamber is adjusted through an exhauster disposed under the chamber.