Film forming method, film forming system, and film forming apparatus

A film forming method comprising:

• disposing a substrate on which an insulating film is formed in a processing container and forming a base film by repeatedly supplying a Ti-containing gas, an Al-containing gas, and a reaction gas into the processing container under a decompressed atmosphere;
• and
• forming a metal layer made of a metal material on the substrate on which the base film is formed,
• wherein the forming the base film comprises forming the base film by setting a supply amount of the Ti-containing gas to be larger than a supply amount of the Al-containing gas when forming a lower portion of the base film, and setting the supply amount of the Ti-containing gas to be smaller than the supply amount of the Al-containing gas when forming an upper portion of the base film,
• wherein a content rate of Al in the base film is 50% or more and less than 100%, and
• wherein the forming the base film comprises at least once repeating:
• forming a first base film by repeating an alternating supply of the Ti-containing gas and the reaction gas at least once with a purge step interposed therebetween;
• and
• forming a second base film by repeating an alternating supply of the Al-containing gas and the reaction gas at least once with a purge step interposed therebetween.