Film formation apparatus and film formation method

A film formation apparatus comprising:

• a chamber which an interior thereof can be made vacuum;
• a rotary table provided inside the chamber, holding a workpiece, and circulating and transporting the workpiece in a circular trajectory;
• a GaN film formation processing unit including a target formed of film formation material containing GaN and a plasma generator which turns sputtering gas introduced between said target formed of film formation material containing GaN and the rotary table into plasma, the GaN film formation processing unit depositing by sputtering particles of the film formation material containing GaN on the workpiece circulated and transported by the rotary table;
• and
• a nitriding processing unit to nitride particles of the film formation material deposited on the workpiece circulated and transported by the rotary table in the GaN film formation processing unit;
• and
• an impurity addition processing unit to add n-type impurity or p-type impurity on the particles of the film formation material containing GaN deposited on the workpiece in the GaN film formation processing unit by sputtering, the impurity addition processing unit comprising a target formed of film formation material containing n-type impurity or p-type impurity and plasma generator making sputtering gas introduced between the target formed of film formation material containing n-type impurity or p-type impurity and the rotary table into plasma,
• wherein the GaN film formation processing unit, the nitriding processing unit, and the impurity addition processing unit each have a processing space apart from each other, with each processing space arranged above and along the circulation and transportation path;
• and wherein the rotary table repeatedly passes the workpiece through the GaN film formation processing unit, the nitriding processing unit, and the impurity addition processing unit in this order to repeat film formation, nitriding, and impurity addition of GaN film and forms, on the workpiece, a predetermined number of layers of GaN films containing n-type impurity or p-type impurity.