Semiconductor nanocrystal, light-emitting film, production method of the light-emitting film, light emitting device, and display device

A light-emitting film comprising a plurality of the semiconductor nanocrystals,

• wherein the plurality of semiconductor nanocrystals comprise an anion of an inorganic metal salt bound to a surface of the semiconductor nanocrystals, wherein the inorganic metal salt comprises an inorganic metal halide, an inorganic metal sulfate, an inorganic metal nitrate, an inorganic metal thiocyanate, or a combination thereof,
• a first organic ligand bound to the surface of the semiconductor nanocrystals, wherein the first organic ligand comprises a substituted or unsubstituted C6 to C30 aromatic ring group and a carboxylate group, a substituted or unsubstituted C3 to C30 aromatic heterocyclic group and a carboxylate group, or a combination thereof, and
• a second organic ligand,
• wherein the semiconductor nanocrystals comprise a core comprising a first semiconductor nanocrystal and a shell disposed on the core, the shell comprising a second semiconductor nanocrystal having a composition different than that of the first semiconductor nanocrystal, and
• wherein a weight ratio of the second organic ligand, the anion of the inorganic metal salt, and the first organic ligand is about 30 to 60:30 to 60:10 to 30, respectively.

A semiconductor nanocrystal comprising

• an anion of an inorganic metal salt bound to a surface of the semiconductor nanocrystal,
• wherein the inorganic metal salt comprises an inorganic metal sulfate, an inorganic metal nitrate, an inorganic metal thiocyanate, or a combination thereof,
• wherein the semiconductor nanocrystal comprises a first semiconductor nanocrystal and a second semiconductor nanocrystal disposed around the first semiconductor nanocrystal, the second semiconductor nanocrystal having a composition different than that of the first semiconductor nanocrystal, and the first semiconductor nanocrystal comprises InP, InZnP, ZnSe, ZnSeTe, or a combination thereof,
• a first organic ligand comprises benzoate, hydroxyl benzoate, halo-benzoate, amino-benzoate, nitro-benzoate, 4-biphenyl carboxylate, cinnamate acid, or a combination thereof, and
• a second organic ligand comprising an anion of RCOOH, RNH2, R2NH, R3N, RSH, RH2PO, R2HPO, R3PO, RH2P, R2HP, R3P, ROH, RCOOR′, RPO(OH)2, RHPOOH, or R2POOH, which is bound to the surface of the semiconductor nanocrystal, wherein, R and R′ are independently hydrogen, C1 to C40 substituted or unsubstituted aliphatic hydrocarbon, or C6 to C40 substituted or unsubstituted aromatic hydrocarbon, or a combination thereof, and in each ligand, at least one R is not hydrogen,
• wherein a weight ratio of the second organic ligand, the anion of the inorganic metal salt, and the first organic ligand is about 30 to 60:30 to 60:10 to 30, respectively.