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US 12,759,943 B2Granted
LTCC dielectric compositions and devices having high Q factors
AssigneeVibrantz GmbH
InventorPeter Marley
Life of this patent
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Abstract
LTCC devices are produced from dielectric compositions Include a mixture of precursor materials that, upon firing, forms a dielectric material having a zinc-lithium-titanium oxide or silicon-strontium-copper oxide host.
Claims18
A lead-free and cadmium-free raw dielectric composition comprising:
- (a) 80-99.9 wt % of a calcined host material comprising:
- i) 45-75 wt % SiO2,
- ii) 15-35 wt % SrO,
- iii) 10-30 wt % CuO,
- iv) no lead, and
- v) no cadmium,
- mixed together with
- (b) 0-8 wt % zinc borate,
- (c) 0.1-4 wt % B2O3,
- (d) 0-4 wt % SiO2,
- (e) 0-4 wt % CaCO3,
- (f) 0-4 wt % Li2CO3,
- (g) 0-4 wt % LiF and
- (h) 0-3 wt % CuO;
- and
- no lead and no cadmium.
13 more elements
A lead-free and cadmium-free composition comprising a mixture that, upon firing, forms a lead-free and cadmium-free dielectric material comprising:
- (a) 45-75 wt % SiO2,
- (b) 15-35 wt % SrO,
- (c) 10-30 wt % CuO,
- (d) 0.1-5 wt % B2O3,
- (e) 0-6 wt % CaO,
- (f) 0-8 wt % ZnO,
- (g) 0-3 wt % Li2O,
- (h) 0-5 wt % LiF, and
- wherein the molar ratio of B2O3 to SiO2 is from 0.0012 to 0.096.
6 more elements
Dependencies are inferred from the claim text.