Organosilicon precursors for deposition of silicon-containing films

A method for depositing a film comprising silicon and oxygen onto a substrate, the method comprising the steps of:

• a) providing a substrate in a reactor;
• introducing into the reactor a composition comprising at least one organosilicon compound;
• c) purging the reactor with purge gas;
• d) introducing at least one of an oxygen-containing source and/or a nitrogen-containing source into the reactor;
• and
• e) purging the reactor with purge gas,
• wherein the steps b through e are repeated until a desired thickness of film is deposited;
• and
• wherein the method is conducted at one or more temperatures ranging from about 25° C. to 600° C.;
• and wherein the organosilicon compound is selected from the group consisting of
• wherein R3 is independently selected from the group consisting of a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 heterocyclic group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aryl group;
• and R4 is selected from the group consisting of hydrogen, a C1 to C10 linear alkyl group, a branched C3 to C10 alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 heterocyclic group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aryl group, wherein R3 and R4 may be linked to form a cyclic ring structure.