# US 12,759,108 B2 · Polishing method, and polishing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,759,108 B2 - Document ID: US12759108B2 - Status: Granted - Kind: B2 - Application number: 18/554,643 - Filed: 2022-01-17 - Published: 2024-06-06 - Granted: 2026-10-13 - Earliest claimed: 2021-04-19 - Assignees: Ebara Corporation - Applicants: Ebara Corporation - Inventors: Masashi Kabasawa; Toshimitsu Sasaki; Yoichi Shiokawa; Keita Yagi; Yuki Watanabe; Nachiketa Chauhan - Web page: https://patentgrep.com/patent/US12759108B2 ## CPC - B24B 37/015: Temperature control - B24B 37/013: Devices or means for detecting lapping completion - B24B 49/04: involving measurement of the workpiece at the place of grinding during grinding operation - B24B 49/14: taking regard of the temperature during grinding - B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ## Abstract The present application relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer, while pressing the substrate against a polishing surface of a polishing pad, and more particularly to a polishing method and a polishing apparatus for polishing a substrate while regulating a polishing load based on measurement values of a film-thickness measuring device. The polishing method includes: controlling a temperature of a polishing surface of a polishing pad to a predetermined temperature by use of a pad-temperature regulating apparatus; and polishing a substrate while controlling a polishing load for pressing the substrate against the polishing surface based on measurement values from a film-thickness measuring device provided in the polishing pad. ## Claims ### Claim 1 A polishing method, comprising; pressing a substrate against a polishing surface of a polishing pad at an arbitrary pressure without controlling a polishing load for pressing the substrate against the polishing surface based on measurement values from a film-thickness measuring device which is provided in the polishing pad, while heating the polishing surface of the polishing pad until reaching a predetermined temperature by use of a pad-temperature regulating apparatus; and after the temperature of the polishing surface reaches the predetermined temperature, polishing the substrate while maintaining the temperature of the polishing surface at the predetermined temperature and controlling the polishing load based on measurement values from the film-thickness measuring device. ### Claim 2 (depends on 1) The polishing method according to claim 1, wherein the predetermined temperature is a first predetermined temperature, polishing of the substrate includes: a first polishing in which the substrate is polished at the first predetermined temperature while controlling the polishing load based on the measurement values of the film-thickness measuring device; and a second polishing in which the substrate is polished at a second predetermined temperature different from the first predetermined temperature while controlling the polishing load based on the measurement values of the film-thickness measuring device, and switching the first polishing to the second polishing is performed when an amount of remaining film in the substrate, measured by the film-thickness measuring device, reaches a predetermined amount. ### Claim 3 (depends on 1) The polishing method according to claim 1, wherein the predetermined temperature is a first predetermined temperature, polishing of the substrate includes: a first polishing in which the substrate is polished at the first predetermined temperature while controlling the polishing load based on the measurement values of the film-thickness measuring device; and a second polishing in which the substrate is polished at a second predetermined temperature, which is changed from the first predetermined temperature, while controlling the polishing load based on the measurement values of the film-thickness measuring device, and switching the first polishing to the second polishing is performed when an amount of remaining film in the substrate, measured by the film-thickness measuring device, reaches a predetermined amount. ### Claim 4 A polishing apparatus, comprising: a polishing table for supporting a polishing pad; a polishing head configured to press a substrate against a surface of the polishing pad so as to polish the substrate; a pad-temperature measuring device configured to measure a temperature of the polishing surface; a pad-temperature regulating apparatus configured to regulate the temperature of the polishing surface; a film-thickness measuring device mounted to the polishing table; and a controller configured to control operations of at least the polishing head and the pad-temperature regulating apparatus, wherein the controller is configured to: press the substrate against the polishing surface at an arbitrary pressure without controlling a polishing load for pressing the substrate against the polishing surface based on measurement values from the film-thickness measuring device, while heating the polishing surface, until reaching a predetermined temperature, by use of the pad-temperature regulating apparatus based on measurement values from the pad-temperature measuring device; and after the temperature of the polishing surface reaches the predetermined temperature, polish the substrate while maintaining the temperature of the polishing surface at the predetermined temperature and controlling the polishing load based on the measurement values from the film-thickness measuring device. ### Claim 5 (depends on 4) The polishing apparatus according to claim 4, wherein the predetermined temperature is a first predetermined temperature, polishing of the substrate includes: a first polishing in which the substrate is polished at the first predetermined temperature while controlling the polishing load based on the measurement values of the film-thickness measuring device; and a second polishing in which the substrate is polished at a second predetermined temperature different from the first predetermined temperature while controlling the polishing load based on the measurement values of the film-thickness measuring device, and the controller is configured to switch the first polishing to the second polishing when an amount of remaining film in the substrate, measured by the film-thickness measuring device, reaches a predetermined amount. ### Claim 6 (depends on 4) The polishing apparatus according to claim 4, wherein the predetermined temperature is a first predetermined temperature, polishing of the substrate includes: a first polishing in which the substrate is polished at the first predetermined temperature while controlling the polishing load based on the measurement values of the film-thickness measuring device; and a second polishing in which the substrate is polished at a second predetermined temperature, which is changed from the first predetermined temperature, while controlling the polishing load based on the measurement values of the film-thickness measuring device, and the controller is configured to switch the first polishing to the second polishing when an amount of remaining film in the substrate, measured by the film-thickness measuring device, reaches a predetermined amount.