# US 12,759,106 B2 · Substrate cleaning member, substrate processing apparatus and substrate cleaning method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,759,106 B2 - Document ID: US12759106B2 - Status: Granted - Kind: B2 - Application number: 18/496,824 - Filed: 2023-10-27 - Published: 2024-05-02 - Granted: 2026-10-13 - Earliest claimed: 2022-10-28 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Kento Kurusu; Akihiro Kubo; Noboru Nakashima; Yasunari Kasai - Web page: https://patentgrep.com/patent/US12759106B2 ## CPC - B24B 29/00: Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents (polishing tools in general B24D13/00) - B24B 53/053: using a rotary dressing tool - H10P 70/15: {by wet cleaning only (H10P70/52 takes precedence)} - H10P 70/56: {Cleaning of wafer backside} - H10P 72/0412: {using mainly scrubbing means, e.g. brushes} - B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A substrate cleaning member includes: a first member including a first contact surface, wherein the first member is configured to clean or polish a main surface of a substrate by moving the first contact surface along the main surface while the first contact surface is in contact with the main surface; a second member including a second contact surface, wherein the second member is configured to clean the main surface by moving the second contact surface along the main surface while the second contact surface is in contact with the main surface; a lower-layer member configured to support the second member such that the second contact surface protrudes beyond the first contact surface in an axial direction in which the predetermined axis extends; and a base configured to support the first member, the second member and the lower-layer member. ## Claims ### Claim 1 A substrate cleaning member comprising: a first member including a first contact surface, an outer edge of which is formed along a circumference around a predetermined axis, wherein the first member is configured to clean or polish a main surface of a substrate by moving the first contact surface along the main surface while the first contact surface is in contact with the main surface; a second member including a second contact surface, an outer edge of which is formed along the circumference outside or inside the first contact surface, wherein the second member is configured to clean the main surface by moving the second contact surface along the main surface while the second contact surface is in contact with the main surface; a lower-layer member configured to support the second member such that the second contact surface protrudes beyond the first contact surface in an axial direction in which the predetermined axis extends; and a base configured to support the first member, the second member and the lower-layer member, wherein the second contact surface is configured such that at least one of surface roughness and hardness of the second contact surface is different from that of the first contact surface, wherein the lower-layer member is made of a softer material than the second member such that, when the second member receives a contact force from the main surface, a position of the second contact surface approaches a position of the first contact surface in the axial direction, wherein each of the second member and the lower-layer member is made of a material including pores, and wherein a pore diameter in the lower-layer member is larger than a pore diameter in the second member. ### Claim 2 (depends on 1) The substrate cleaning member of claim 1, further comprising a middle-layer member disposed between the second member and the lower-layer member and made of a material harder than the second member and the lower-layer member, wherein the second member, the middle-layer member, and the lower-layer member are formed in an annular shape to extend along the circumference. ### Claim 3 (depends on 2) The substrate cleaning member of claim 2, wherein, in the axial direction, a lower end of the middle-layer member is located above the first contact surface, or at least a portion of the middle-layer member is located at a same height as the first contact surface. ### Claim 4 (depends on 2) The substrate cleaning member of claim 2, wherein a length of the lower-layer member in the axial direction is greater than a length of the second member in the axial direction. ### Claim 5 (depends on 2) The substrate cleaning member of claim 2, wherein the lower-layer member has a width that coincides with a width of the second member in a radial direction of the circumference. ### Claim 6 (depends on 2) The substrate cleaning member of claim 2, wherein at least a portion of the lower-layer member is formed such that a width in a radial direction of the circumference increases as a distance between the portion of the lower-layer member and the second contact surface increases, and is in contact with a support portion that supports the first member. ### Claim 7 (depends on 1) A substrate processing apparatus comprising: the substrate cleaning member according to claim 1; a substrate holder configured to hold the substrate; and a driver configured to move the first contact surface and the second contact surface along the main surface of the substrate held by the substrate holder. ### Claim 8 A substrate cleaning method comprising: polishing a main surface of a substrate by a substrate cleaning member; and cleaning the main surface by the substrate cleaning member after the polishing of the main surface, wherein the substrate cleaning member includes: a first member including a first contact surface, an outer edge of which is formed along a circumference around a predetermined axis; a second member including a second contact surface, an outer edge of which is formed along the circumference outside or inside the first contact surface; a lower-layer member configured to support the second member such that the second contact surface protrudes beyond the first contact surface in an axial direction in which the predetermined axis extends and made of a softer material than the second member; and a base configured to support the first member, the second member, and the lower-layer member, wherein the second contact surface is configured such that at least one of surface roughness and hardness of the second contact surface is different from that of the first contact surface, wherein each of the second member and the lower-layer member is made of a material including pores, wherein a pore diameter in the lower-layer member is larger than a pore diameter in the second member, and wherein the polishing of the main surface includes: bringing the first contact surface and the second contact surface into contact with the main surface by applying a force to the second member from the main surface while the lower-layer member supports the second member such that the second contact surface aligns with the first contact surface in the axial direction; and moving the first contact surface and the second contact surface along the main surface while the first contact surface and the second contact surface are in contact with the main surface, and wherein the cleaning of the main surface includes: moving the second contact surface along the main surface while the first contact surface is not in contact with the main surface and the second contact surface is in contact with the main surface.